DCR806SG Dynex Semiconductor, DCR806SG Datasheet - Page 3

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DCR806SG

Manufacturer Part Number
DCR806SG
Description
Phase Control Thyristor
Manufacturer
Dynex Semiconductor
Datasheet
SURGE RATINGS
THERMAL AND MECHANICAL DATA
www.dynexsemi.com
Symbol
Symbol
R
R
I
I
T
th(c-h)
TSM
TSM
T
I
I
th(j-c)
-
2
2
stg
vj
t
t
Surge (non-repetitive) on-state current
Surge (non-repetitive) on-state current
I
I
Thermal resistance - case to heatsink
Virtual junction temperature
Storage temperature range
Clamping force
Thermal resistance - junction to case
2
2
t for fusing
t for fusing
Parameter
Parameter
Double side cooled
Single side cooled
Clamping force 12.5kN
with mounting compound
On-state (conducting)
Reverse (blocking)
10ms half sine; T
10ms half sine; T
V
R
= 50% V
Conditions
Conditions
V
R
RRM
= 0
- 1/4 sine
case
case
Anode dc
Cathode dc
Single side
dc
Double side
= 125
= 125
o
o
C
C
Min.
11.0
-55
-
-
-
-
-
-
-
405 x 10
633 x 10
11.25
DCR806SG
Max.
9.0
0.008
0.016
0.032
0.064
0.064
Max.
13.0
135
125
125
3
3
Units
Units
o
o
o
o
o
C/W
C/W
C/W
C/W
C/W
A
A
kN
kA
kA
o
o
o
C
C
C
2
2
s
s
3/8

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