MX29LV800AB Macronix, MX29LV800AB Datasheet - Page 54

• Manufacturer Part Number: MX29LV800AB
• Description: 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
• Manufacturer: Macronix

Note:
TABLE 18. DATA RETENTION
P/N:PM0709
TABLE 17. LATCH-UP CHARACTERISTICS
TABLE 16. ERASE AND PROGRAMMING PERFORMANCE (1)
PARAMETER
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Chip Programming Time
Erase/Program Cycles
Input Voltage with respect to GND on ACC, OE, RESET, A9
Input Voltage with respect to GND on all power pins, Address pins, CE and WE
Input Voltage with respect to GND on all I/O pins
Current
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.
Parameter Description
Data Retention Time
2. Typical values measured at 25°C, 3V.
3. Maximum values measured at 25° C, 2.7V.
1. Not 100% Tested, Excludes external system level over head.
MX29LV800T/B & MX29LV800AT/AB
Byte Mode
Word Mode
54
100,000
MIN.
Test Conditions
150° C
125° C
TYP.(2)
LIMITS
0.7
5.8
14
11
9
9
MAX.(3)
-100mA
300
360
-1.0V
-1.0V
-1.0V
MIN.
15
17
27
Min
10
20
REV. 2.5, DEC. 23, 2003
VCC + 1.0V
VCC + 1.0V
UNITS
Cycles
+100mA
sec
sec
sec
sec
us
us
12.5V
MAX.
Years
Years
Unit