spw47n60 Infineon Technologies Corporation, spw47n60 Datasheet - Page 3

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spw47n60

Manufacturer Part Number
spw47n60
Description
Transistor,mosfet,n-channel,600v V Br Dss,47a I D ,to-247var
Manufacturer
Infineon Technologies Corporation
Datasheet

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Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
1 C
2 C
Electrical Characteristics , at T
Parameter
Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Effective output capacitance,
time related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
o(er)
o(tr)
is a fixed capacitance that gives the same charging time as C
is a fixed capacitance that gives the same stored energy as C
1)
2)
Q
Q
Q
V
Symbol
g
C
C
C
C
C
t
t
t
t
d(on)
r
d(off)
f
j
(plateau)
gs
gd
g
fs
iss
oss
rss
o(er)
o(tr)
= 25 °C, unless otherwise specified
Final data
V
V
V
V
V
I
V
f=1MHz
V
V
V
I
T
Page 3
D
D
DD
DD
GS
DD
j
DS
GS
GS
DS
DD
=125
=30A
=47A, R
=350V, I
=350V, I
=0 to 10V
=350V, I
=0V to 480V
=0V, V
=0V,
=380V, V
2*I
Conditions
D
*R
G
DS
=1.8 ,
D
D
D
DS(on)max
=47A
=47A,
=47A
GS
=25V,
=0/13V,
oss
oss
while V
while V
,
DS
min.
DS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
is rising from 0 to 80% V
is rising from 0 to 80% V
Values
6800
2200
121
252
5.5
193
412
typ.
145
111
24
40
18
27
SPW47N60C3
8
2002-08-08
max.
320
165
12
-
-
-
-
-
-
-
-
-
-
-
nC
V
DSS
Unit
S
pF
pF
ns
DSS
.
.

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