mtb2p50e ON Semiconductor, mtb2p50e Datasheet

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mtb2p50e

Manufacturer Part Number
mtb2p50e
Description
Power Mosfet 2 A, 500 V, P-channel D2pak
Manufacturer
ON Semiconductor
Datasheet

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MTB2P50E
Power MOSFET
2 Amps, 500 Volts
P−Channel D
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition, this Power MOSFET is designed
to withstand high energy in the avalanche and commutation modes.
The energy efficient design also offers a drain−to−source diode with a
fast recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 4
MAXIMUM RATINGS
Drain−Source Voltage
Drain−Gate Voltage (R
Gate−Source Voltage − Continuous
Non−Repetitive (t
Drain Current − Continuous
Drain Current
Drain Current
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
(V
I
Thermal Resistance
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 sec
L
This high voltage MOSFET uses an advanced termination scheme
Fast Recovery Diode
Robust High Voltage Termination
Avalanche Energy Specified
Source−to−Drain Diode Recovery Time Comparable to a Discrete
Diode is Characterized for Use in Bridge Circuits
I
Short Heatsink Tab Manufactured — Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
Pb−Free Package is Available
pad size.
DD
= 4.0 Apk, L = 10 mH, R
DSS
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 1)
= 100 Vdc, V
and V
DS(on)
− Continuous @ 100°C
− Single Pulse (t
p
GS
≤ 10 ms)
J
Rating
= 25°C
Specified at Elevated Temperature
= 10 Vdc,
GS
2
PAK
(T
= 1.0 MW)
C
G
A
= 25°C unless otherwise noted)
= 25 W)
Preferred Device
= 25°C (Note 1)
p
≤ 10 ms)
Symbol
T
V
V
V
R
R
R
J
V
E
I
GSM
P
, T
DSS
DGR
T
I
I
DM
qJC
qJA
qJA
GS
AS
D
D
D
L
stg
Value
−55 to
1.67
62.5
500
500
± 20
± 40
260
150
2.0
1.6
6.0
0.6
2.5
75
80
50
1
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
mJ
°C
°C
W
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
MTB2P50ET4
MTB2P50ET4G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MARKING DIAGRAM & PIN ASSIGNMENT
Device
2 AMPERES, 500 VOLTS
1
T2P50E = Device Code
A
Y
WW
G
ORDERING INFORMATION
G
http://onsemi.com
Gate
R
DS(on)
1
= Assembly Location
= Year
= Work Week
= Pb−Free Package
P−Channel
(Pb−Free)
T
P50EG
AYWW
Package
D
D
D
Drain
Drain
2
2
PAK
PAK
Publication Order Number:
4
2
= 6 W
S
2
CASE 418B
STYLE 2
3
Source
800/Tape & Reel
800/Tape & Reel
D
2
PAK
Shipping
MTB2P50E/D

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mtb2p50e Summary of contents

Page 1

... STYLE 2 4 Drain T 2 P50EG AYWW Gate Source Drain T2P50E = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION † Package Shipping 2 D PAK 800/Tape & Reel 2 D PAK 800/Tape & Reel (Pb−Free) Publication Order Number: MTB2P50E/D ...

Page 2

... Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperature. MTB2P50E (T = 25°C unless otherwise noted ...

Page 3

... DRAIN CURRENT (AMPS) D Figure 3. On−Resistance versus Drain Current and Temperature 1.5 1 0.5 − 50 − JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature MTB2P50E 4 ≥ 3 2 Figure 2 ...

Page 4

... GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation MTB2P50E POWER MOSFET SWITCHING The capacitance (C a voltage corresponding to the off−state condition when calculating t on−state when calculating t At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET ...

Page 5

... T )/(R ). qJC J(MAX Power MOSFET designated E−FET can be safely used in switching circuits with unclamped inductive loads. For MTB2P50E 1000 300 V = 250 250 ...

Page 6

... SINGLE PULSE 0.01 1.0E−05 1.0E−04 di/ 0. Figure 14. Diode Reverse Recovery Waveform MTB2P50E SAFE OPERATING AREA 100 1000 25 T Figure 12. Maximum Avalanche Energy versus P (pk DUTY CYCLE 1.0E−03 1.0E−02 t, TIME (s) Figure 13 ...

Page 7

... CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MTB2P50E PACKAGE DIMENSIONS 2 D PAK 3 CASE 418B−04 ISSUE ...

Page 8

... N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 8 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MTB2P50E/D ...

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