mtb3n100e Freescale Semiconductor, Inc, mtb3n100e Datasheet
mtb3n100e
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mtb3n100e Summary of contents
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... Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1995 D G Rating 10 ms) Order this document by MTB3N100E/D MTB3N100E Motorola Preferred Device TMOS POWER FET 3.0 AMPERES 1000 VOLTS R DS(on) = 4.0 OHM CASE 418B–02, Style PAK ...
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... MTB3N100E ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage ( Vdc 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( 1000 Vdc Vdc 1000 Vdc Vdc 125 C) Gate–Body Leakage Current ( ...
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... Figure 4. On–Resistance versus Drain Current 100000 10000 1000 100 10 1 100 125 150 0 100 200 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 6. Drain–To–Source Leakage MTB3N100E 100 –55 C 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6 DRAIN CURRENT (AMPS) ...
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... MTB3N100E Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are deter- mined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculat- ing rise and fall because drain– ...
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... DM ), the energy rating is specified at rated continuous cur- rent ( accordance with industry custom. The energy rat- ing must be derated for temperature as shown in the accompanying graph (Figure 12). Maximum energy at cur- rents below rated continuous I D can safely be assumed to equal the values indicated. MTB3N100E t d(off d(on) 10 ...
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... MTB3N100E 100 SINGLE PULSE 1.0 100 s 0.1 R DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0.1 1 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 1.0E–05 1.0E–04 di/ 0. Figure 14. Diode Reverse Recovery Waveform ...
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... Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad . Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. MTB3N100E Board Material = 0.0625 G–10/FR– Copper ...
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... MTB3N100E Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. Solder stencils are used to screen the optimum amount. These stencils are typically 0.008 inches thick and may be made of brass or stainless steel. For packages such as the SC–59, SC– ...
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... C 160 C 150 C SOLDER IS LIQUID FOR SECONDS 100 C 140 C (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES Figure 18. Typical Solder Heating Profile MTB3N100E STEP 6 STEP 7 VENT COOLING 205 TO 219 C PEAK AT SOLDER JOINT T MAX 9 ...
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... DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.340 0.380 8.64 9.65 B 0.380 0.405 9.65 10.29 C 0.160 0.190 4.06 4.83 D 0.020 0.035 0.51 0.89 E 0.045 0.055 1.14 1.40 G 0.100 BSC 2.54 BSC H 0.080 0.110 2.03 2.79 J 0.018 0.025 0.46 0.64 K 0.090 0.110 2.29 2.79 S 0.575 0.625 14.60 15.88 V 0.045 0.055 1.14 1.40 MTB3N100E/D ...