ipp100n08n3g Infineon Technologies Corporation, ipp100n08n3g Datasheet - Page 5

• Manufacturer Part Number: ipp100n08n3g
• Description: Optimos Tm 3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
280
240
200
160
120
180
150
120
80
40
90
60
30
DS
0
GS
0
); T
0
0
); |V
j
=25 °C
j
GS
DS
|>2|I
1
2
D
|R
DS(on)max
2
175 °C
10 V
V
V
GS
DS
4
8 V
[V]
[V]
3
25 °C
6
4
7 V
6.5 V
6 V
5.5 V
4.5 V
5 V
page 5
5
8
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
120
80
40
20
16
12
D
=f(I
8
4
0
0
); T
0
0
D
5 V
j
); T
=25 °C
GS
40
5.5 V
j
=25 °C
IPP100N08N3 G IPI100N08N3 G
40
80
6 V
80
120
I
I
6.5 V
D
D
[A]
[A]
160
120
IPB097N08N3 G
7 V
200
160
240
8 V
10 V
2008-12-05
280
200