spd50n03s2l-06g Infineon Technologies Corporation, spd50n03s2l-06g Datasheet - Page 7

• Manufacturer Part Number: spd50n03s2l-06g
• Description: Optimos? Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

15 Drain-source breakdown voltage
V
parameter: I
13 Typ. avalanche energy
E
par.: I
(BR)DSS
AS
mJ
260
220
200
180
160
140
120
100
= f (T
V
36
34
33
32
31
30
29
28
27
80
60
40
20
D
-60
0
25
= 50 A , V
SPD50N03S2L-06
= f (T
j
)
45
-20
D
=10 mA
j
)
65
20
DD
85
= 25 V, R
60
105
100
125
GS
145
140
= 25 Ω
°C
°C
T
T
j
j
200
185
Page 7
14 Typ. gate charge
V
parameter: I
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
SPD50N03S2L-06
Gate
10
D
= 50 A pulsed
)
20
0,2
30
V
DS max
SPD50N03S2L-06
40
50
0,8 V
02-09-2008
DS max
60
nC
Q
Gate
80
G