mgsf1p02 ETC-unknow, mgsf1p02 Datasheet - Page 2

• Manufacturer Part Number: mgsf1p02
• Description: Power Mosfet P-channel
• Manufacturer: ETC-unknow

Source-Drain Diode Characteristics
Switching Characteristics
Note:
Turn-Off Delay Time
Electrical Characteristics
Static
Dynamic Characteristics
http://www.weitron.com.tw
Turn-On Delay Time
Rise Time
Fall Time
Gate Charge
Continuous Current
Pulsed Current
Forward Voltage
Drain-Source Breakdown Voltage
V
Gate-body Leakage Current
V
Zero Gate Voltage Drain Current
V
V
Static Drain-to-Source On-Resistance
V
V
Input Capacitance
V
Output Capacitance
V
Transfer Capacitance(See FIG.6)
V
Gate-Threshold Voltage
V
DS
DS
DG
GS
DS
GS
DS
DS
GS
GS
=0V, I
=
=10V, I
=4.5V, I
=5.0V
=5.0V
=V
=20V, V
=20V, V
=5.0V
MGSF1P02
WEITRON
1. Pulse Test: Pulse Width
2. Switching characteristics are independent of operating junction temperature.
+ _ 20V, V
GS
D
, I
D
=10 uA
D
GS
GS
D
=1.5A
=0.75A
=250 uA
DS
=0V
=0V, T
Characteristic
=0V
(2)
j
=125 C
(V
R =5
DD
< _
L
300us, Duty Cycle 2%.
=15V, I =1.0A,
0Ω
, )
D
(2)
(T A =25 C Unless otherwise noted)
< _
Symbol
V
V
r
t
t
(BR)DSS
C
C
d(off )
I
I
DS (
C
GS (th)
d
Q
I SM
V SD
GSS
DSS
rss
I
iss
t
t
oss
(
S
r
T
on
f
on
)
)
Min
-
-
-
1.0
20
-
-
-
-
-
-
-
-
-
-
-
-
-
6000
Typ
16
8.0
2.5
0.235
0.375
1.0
1.5
1.7
130
-
-
120
-
-
60
-
-
0.75
Max
0.6
0.350
0.500
+ _
-
2.4
1.0
-
-
-
-
-
100
10
-
-
-
-
Unit
Ohms
PF
nA
uA
pC
A
nS
V
V
V