bsz086p03ns3eg Infineon Technologies Corporation, bsz086p03ns3eg Datasheet - Page 4

• Manufacturer Part Number: bsz086p03ns3eg
• Description: Optimostm P3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
10
10
=f(T
10
10
10
80
70
60
50
40
30
20
10
-1
-2
2
1
0
0
10
DS
1000
0.01
100
0.1
10
1
0.1
C
0
-1
); T
); t
p
C
p
≤10 s
=25 °C
40
limited by on-state
resistance
1)
10
; D =0
1
0
-V
T
C
DS
80
[°C]
[V]
10
10
1
120
100 µs
10 ms
1 ms
DC
1 µs
160
page 4
10
100
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJS
=f(T
10
10
10
10
=f(t
-1
-2
1
0
48
44
40
36
32
28
24
20
16
12
10
C
8
4
0
0.01
10
0.1
0.00001
1
); |V
0.05
0.02
0.1
0.01
0.5
0.2
single pulse
-5
p
0
)
GS
10
|≥10 V; t
0.0001
-4
p
/T
40
10
0.001
p
-3
≤10 s
T
t
C
10
p
80
[°C]
0.01
[s]
-2
BSZ086P03NS3E G
10
0.1
-1
120
10
1
0
2009-03-16
160
10
10
1