ipd06n03lbg Infineon Technologies Corporation, ipd06n03lbg Datasheet - Page 5

• Manufacturer Part Number: ipd06n03lbg
• Description: Optimos 2 Power-transistor
• Manufacturer: Infineon Technologies Corporation

Rev. 0.4
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
150
130
110
100
-10
90
80
70
60
50
40
30
20
10
90
70
50
30
10
DS
GS
0
); T
0
0
); |V
j
=25 °C
j
GS
DS
|>2|I
10 V
1
D
|R
1
DS(on)max
4.5 V
175 °C
2
V
V
GS
DS
[V]
[V]
3
25 °C
2
4
2.8 V
3.5 V
3.8 V
3.2 V
4.1 V
3 V
page 5
3
5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
120
100
25
20
15
10
80
60
40
20
D
=f(I
5
0
0
); T
0
0
D
j
); T
=25 °C
3 V
IPU06N03LB
GS
20
j
=25 °C
3.2 V
20
40
3.5 V
I
I
D
D
60
40
[A]
[A]
3.8 V
80
IPS06N03LB
60
100
4.5 V
4.1 V
10 V
2008-04-23
120
80