psmg50-05 Power Semiconductors, Inc., psmg50-05 Datasheet
psmg50-05
Manufacturer Part Number
psmg50-05
Description
Hiperfettm Power Mosfet
Manufacturer
Power Semiconductors, Inc.
Datasheet
1.PSMG50-05.pdf
(4 pages)
HiPerFET
in ECO-PAC 2
(Electrically Isolated Back Surface)
Single MOSFET Die
Preliminary Data Sheet
MOSFET
Symbol
V
V
I
I
dv/dt
E
E
Symbol
R
V
I
I
Q
Q
Q
t
t
t
t
V
R
D25
D90
DSS
GSS
d(on)
d(off)
f
r
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
GS
AS
AR
GSth
F
DSS
DSon
g
gd
thJC
gs
Conditions
T
T
T
V
T
I
I
Conditions
V
V
V
V
(reverse conduction) I
per MOSFET
D
D
VJ
C
C
VJ
DS
GS
DS
DS
GS
= 20 A; L = 5 µH; T
= 10 A; L = 36 mH; T
= 25°C
= 90°C
V
I
V
= 25°C to 150°C
= 150°C
D
< V
= 20 V; I
= V
= 10 V; I
= ±20 V; V
GS
GS
TM
= 25 A; R
= 10 V; V
= 10 V; V
DSS
DSS
; I
; V
Power MOSFET
F
D
D
GS
= I
= 8 mA;
DS
G
50A; di
= 0 V; T
DS
DS
D90
= 1.8
= 0 V
= 380 V;
= 250 V; I
T
F
VJ
C
F
C
VJ
= 20 A; V
/dt
= 25°C
= 25°C
= 25°C
= 125°C
D
(T
= 50 A
100A/µs
VJ
GS
= 25°C, unless otherwise specified)
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
= 0 V
I K10
K13
PSMG 50/05*
X18
min.
Characteristic Values
2
A1
Maximum Ratings
100
330
155
120
typ.
55
45
60
45
*NTC optional
500
±20
tbd
43
60
L N 9
5
3
K15
max.
100 µA
100 nA
0.3 K/W
4
2 mA
V/ns
m
mJ
nC
nC
nC
n s
n s
n s
n s
V
V
A
A
V
V
J
Caution: These Devices are
sensitive to electrostatic
discharge. Users should observe
proper ESD handling precautions.
Features
•
•
•
•
Applications
•
•
•
•
•
ECO-PAC 2 with DCB Base
- Electrical isolation towards the
heatsink
- Low coupling capacitance to the
heatsink for reduced EMI
- High power dissipation
- High temperature cycling capability
of chip on DCB
- solderable pins for DCB mounting
fast CoolMOS power MOSFET
- 2
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
Enhanced total power density
Switched mode power supplies
(SMPS)
Uninterruptible power supplies (UPS)
Power factor correction (PFC)
Welding
Inductive heating
UL certified, E 148688
I
V
R
t
D25
rr
nd
DSS
DSon
generation
ECO-PAC
= 43 A
= 500 V
= 100 m
< 250 ns
TM
2
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psmg50-05 Summary of contents
Page 1
HiPerFET Power MOSFET TM in ECO-PAC 2 (Electrically Isolated Back Surface) Single MOSFET Die Preliminary Data Sheet MOSFET Symbol Conditions 25°C to 150°C DSS 25°C D25 90°C ...
Page 2
Module Symbol Conditions stg mA; 50/60 Hz ISOL ISOL M Mounting torque (M4 Max. allowable acceleration Symbol Conditions d Creepage distance on surface S d Strike distance in ...
Page 3
Figure 1. Output Characteristics at 25 140 120 J J 100 Volts DS Figure 3. R normalized to 0.5 ...
Page 4
Figure 7. Gate Charge 250V 27. 100 150 200 Gate Charge - nC Figure 9. Forward Voltage Drop of the Intrinsic Diode 100 80 60 ...