psmn005-25d-hg NXP Semiconductors, psmn005-25d-hg Datasheet - Page 6

• Manufacturer Part Number: psmn005-25d-hg
• Description: Psmn005-25d N-channel Logic Level Trenchmos Tm Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
October 1999
Fig.9. Normalised drain-source on-state resistance.
N-channel logic level TrenchMOS
50
45
40
35
30
25
20
15
10
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
80
75
70
65
60
55
50
45
40
35
30
25
20
15
10
5
0
2
1
0
5
0
Fig.8. Typical transconductance, T
-60
0
0
Drain current, ID (A)
Transconductance, gfs (S)
Normalised On-state Resistance
VDS > ID X RDS(ON)
VDS > ID X RDS(ON)
0.2 0.4 0.6 0.8
Fig.7. Typical transfer characteristics.
-40
5
-20
10
R
0
DS(ON)
Gate-source voltage, VGS (V)
Junction temperature, Tj (C)
15
20
1
Drain current, ID (A)
/R
I
1.2 1.4 1.6 1.8
D
g
20
40
fs
DS(ON)25 ˚C
= f(V
= f(I
60
25
175 C
GS
D
)
80
)
30
= f(T
100
Tj = 25 C
2
35
2.2 2.4 2.6 2.8
j
)
120
Tj = 25 C
j
40
= 25 ˚C .
140
175 C
45
160
180
50
3
(TM)
6
transistor
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
2.25
1.75
1.25
0.75
0.25
10000
1.5
0.5
1000
V
100
2
1
0
Fig.12. Typical capacitances, C
-60
GS(TO)
I
C = f(V
Threshold Voltage, VGS(TO) (V)
D
0.1
0
= f(V
Drain current, ID (A)
Capacitances, Ciss, Coss, Crss (pF)
Fig.11. Sub-threshold drain current.
VDS = 5 V
-40
Fig.10. Gate threshold voltage.
= f(T
DS
-20
GS)
minimum
0.5
); conditions: V
; conditions: T
j
); conditions: I
0
Drain-Source Voltage, VDS (V)
Gate-source voltage, VGS (V)
20
Junction Temperature, Tj (C)
1
1
typical
40
60
minimum
1.5
j
maximum
typical
GS
= 25 ˚C; V
D
PSMN005-25D
80
= 1 mA; V
= 0 V; f = 1 MHz
100
Product specification
10
maximum
2
iss
120
, C
DS
140
DS
Ciss
Coss
Crss
oss
2.5
= V
, C
= V
Rev 1.100
160
GS
rss
GS
100
.
180
3