sie836df Vishay, sie836df Datasheet

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sie836df

Manufacturer Part Number
sie836df
Description
N-channel 200-v D-s Mosfet
Manufacturer
Vishay
Datasheet
Document Number: 68742
S-82580-Rev. A, 27-Oct-08
Notes:
a. T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed coppe
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Package Drawing
http://www.vishay.com/doc?68798
Top surface is connected to pins 1, 5, 6, and 10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
V
10
D
1
D
C
DS
200
Ordering Information: SiE836DF-T1-E3 (Lead (Pb)-free)
= 25 °C.
(V)
G
G
2
9
Top View
S
3
S
8
D
0.130 at V
S
4
S
7
R
DS(on)
D
D
5
GS
6
(Ω)
= 10 V
J
PolarPAK
= 150 °C)
N-Channel 200-V (D-S) MOSFET
6
D
5
I
D
18.3
(A)
7
Bottom View
4
a
S
d, e
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
C
C
C
C
C
A
A
A
A
A
A
Q
8
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
3
= 25 °C, unless otherwise noted
g
27 nC
(Typ.)
G
9
2
New Product
10
D
1
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
AS
S
D
FEATURES
APPLICATIONS
stg
• TrenchFET
• Ultra Low Thermal Resistance Using
• Leadframe-Based
• Low Q
• 100 % R
Top-Exposed PolarPAK
Double-Sided Cooling
- Die Not Exposed
Primary Side Switch
gd
/Q
g
and UIS Tested
gs
®
Power MOSFET
Ratio Helps Prevent Shoot-Through
http://www.vishay.com/ppg?68742
G
For Related Documents
- 55 to 150
N-Channel MOSFET
4.1
3.3
4.3
5.2
3.3
Limit
14.6
± 30
18.3
14.6
1.25
200
104
260
New
15
66
5
b, c
b, c
b, c
b, c
b, c
a
®
D
S
Package for
Encapsulated
Vishay Siliconix
SiE836DF
www.vishay.com
Package
Unit
RoHS
COMPLIANT
mJ
°C
W
V
A
1

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sie836df Summary of contents

Page 1

... Top View Top surface is connected to pins and 10 Ordering Information: SiE836DF-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current ...

Page 2

... SiE836DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient a Maximum Junction-to-Case (Drain Top Maximum Junction-to-Case (Source) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). ...

Page 3

... S-82580-Rev. A, 27-Oct-08 New Product thru 2.0 2.5 3.0 1800 1500 1200 160 SiE836DF Vishay Siliconix ° ° 125 ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... SiE836DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 4.5 4.0 3.5 3.0 2.5 2 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0. °C J 0.00 0.8 1 250 µ 100 125 150 ...

Page 5

... Document Number: 68742 S-82580-Rev. A, 27-Oct-08 New Product 120 100 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiE836DF Vishay Siliconix 100 125 T - Case Temperature (°C) C Power Derating, Junction-to-Case www.vishay.com 150 5 ...

Page 6

... SiE836DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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