mtp15n06v ON Semiconductor, mtp15n06v Datasheet

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mtp15n06v

Manufacturer Part Number
mtp15n06v
Description
Power Mosfet 15 Amps, 60 Volts
Manufacturer
ON Semiconductor
Datasheet

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Part Number
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Part Number:
MTP15N06V
Quantity:
5 510
Part Number:
MTP15N06V
Manufacturer:
TOSHIBA
Quantity:
6 000
MTP15N06V
Power MOSFET
15 Amps, 60 Volts
N−Channel TO−220
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 4
MAXIMUM RATINGS
Drain−Source Voltage
Drain−Gate Voltage (R
Gate−Source Voltage
Drain Current − Continuous @ 25°C
Drain Current
Drain Current
Total Power Dissipation @ 25°C
Operating and Storage Temperature
Single Pulse Drain−to−Source Avalanche
Thermal Resistance − Junction to Case
Thermal Resistance
Maximum Lead Temperature for Soldering
This Power MOSFET is designed to withstand high energy in the
Avalanche Energy Specified
I
DSS
− Continuous
− Single Pulse (t
Derate above 25°C
Range
Energy − Starting T
(V
I
Purposes, 1/8″ from case for 10
seconds
L
DD
= 15 Apk, L = 1.0 mH, R
and V
= 25 Vdc, V
DS(on)
− Continuous @ 100°C
− Single Pulse (t
Rating
p
GS
≤ 50 μs)
Specified at Elevated Temperature
− Junction to Ambient
J
GS
= 10 Vdc,
= 25°C
(T
= 1.0 MΩ)
C
= 25°C unless otherwise noted)
Preferred Device
G
p
= 25 Ω)
≤ 10 μs)
Symbol
T
V
V
V
R
R
V
J
E
I
P
DGR
GSM
, T
DSS
DM
T
I
I
θJC
θJA
GS
AS
D
D
D
L
stg
−55 to
Value
± 20
± 25
2.73
62.5
175
113
260
8.7
0.5
60
60
15
45
55
1
Watts
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
mJ
°C
°C
MTP15N06V
Preferred devices are recommended choices for future use
and best overall value.
1
2
Device
3
MTP15N06V
LL
Y
WW
ORDERING INFORMATION
4
R
G
DS(on)
http://onsemi.com
15 AMPERES
CASE 221A
TO−220AB
STYLE 5
60 VOLTS
TO−220AB
Package
N−Channel
D
= 120 mΩ
Publication Order Number:
= Device Code
= Location Code
= Year
= Work Week
MARKING DIAGRAM
& PIN ASSIGNMENT
S
Gate
1
MTP15N06V
LLYWW
Drain
Drain
50 Units/Rail
MTP15N06V/D
Shipping
4
2
3
Source

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mtp15n06v Summary of contents

Page 1

... AMPERES 60 VOLTS R = 120 mΩ DS(on) N−Channel MARKING DIAGRAM & PIN ASSIGNMENT 4 4 Drain TO−220AB CASE 221A STYLE 5 MTP15N06V LLYWW Gate Source 2 Drain MTP15N06V = Device Code LL = Location Code Y = Year WW = Work Week ORDERING INFORMATION Package Shipping TO−220AB 50 Units/Rail Publication Order Number: MTP15N06V/D ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage ( Vdc 250 μAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc Vdc, ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 25° DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0. ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Δt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

TOTAL CHARGE (nC) T Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge DRAIN−TO−SOURCE DIODE CHARACTERISTICS 15 12 The Forward Biased Safe Operating ...

Page 6

SINGLE PULSE T = 25° 100 μ 1.0 R LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 1 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward ...

Page 7

... U 0.000 0.050 0.00 1.27 V 0.045 −−− 1.15 −−− Z −−− 0.080 −−− 2.04 STYLE 5: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MTP15N06V/D ...

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