sir422dp Vishay, sir422dp Datasheet

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sir422dp

Manufacturer Part Number
sir422dp
Description
N-channel 40-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
Document Number: 65025
S09-1336-Rev. A, 13-Jul-09
Ordering Information: SiR422DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
V
DS
40
(V)
8
6.15 mm
D
7
C
D
= 25 °C. Package limited.
0.0066 at V
6
0.008 at V
D
PowerPAK
Bottom View
5
R
D
DS(on)
GS
GS
J
1
(Ω)
= 4.5 V
= 150 °C)
®
= 10 V
S
b, f
SO-8
2
S
N-Channel 40-V (D-S) MOSFET
3
S
5.15 mm
4
I
D
G
40
40
(A)
Steady State
a
d, e
t ≤ 10 s
T
T
T
T
L = 0.1 mH
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
16.1 nC
g
(Typ.)
Symbol
R
R
thJA
thJC
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• 100 % UIS Tested
• POL
• Synchronous Rectification
Definition
Compliant to RoHS Directive 2002/95/EC
Typical
3.1
20
g
Tested
®
Power MOSFET
- 55 to 150
20.5
16.4
4.1
3.2
Limit
± 20
34.7
22.2
5
260
40
40
40
40
70
30
45
b, c
b, c
b, c
a
a
b, c
b, c
a
Maximum
G
3.6
25
N-Channel MOSFET
Vishay Siliconix
SiR422DP
D
S
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
A
1

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sir422dp Summary of contents

Page 1

... Bottom View Ordering Information: SiR422DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Avalanche Energy Continuous Source-Drain Diode Current Maximum Power Dissipation ...

Page 2

... SiR422DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 65025 S09-1336-Rev. A, 13-Jul- 1.5 2.0 2 SiR422DP Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... SiR422DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.5 0.2 - 0.1 - 0.4 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.030 0.024 °C J 0.018 0.012 0.006 0.000 0.8 1.0 1 250 µA ...

Page 5

... T - Case Temperature (°C) C Current Derating* 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) SiR422DP Vishay Siliconix 125 150 2.5 2.0 1.5 1.0 0.5 0 100 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www ...

Page 6

... SiR422DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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