sgm2310a SeCoS Halbleitertechnologie GmbH, sgm2310a Datasheet

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sgm2310a

Manufacturer Part Number
sgm2310a
Description
N-channel Enhancement Mode Power Mosfet
Manufacturer
SeCoS Halbleitertechnologie GmbH
Datasheet
1.SGM2310A.pdf (4 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
SGM2310A
Manufacturer:
SECOS
Quantity:
20 000
http://www.SeCoSGmbH.com/
16-Dec-2009 Rev. A
DESCRIPTION
FEATURES
MARKING
ABSOLUTE MAXIMUM RATINGS
THERMAL DATA
The SGM2310A utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient
and cost-effectiveness device. The SGM2310A is universally
used for all commercial-industrial applications.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Operating Junction & Storage Temperature
Thermal Resistance Junction-Ambient
2310A
Simple drive requirement
Super high density cell design for extremely low R
Elektronische Bauelemente
PARAMETER
PARAMETER
1,2
3
3
= Date code
3
(Max).
A suffix of “-C” specifies halogen & lead-free
RoHS Compliant Product
1
G
P
I
I
DS(ON)
D
D
D
SYMBOL
SYMBOL
@ T
@ T
@ T
T
J
R
V
V
, T
I
A
A
DM
A
θJA
DS
GS
= 25° C
= 70° C
STG
= 25° C
N-Channel Enhancement Mode Power MOSFET
24
3
D
S
5 A, 60 V, R
K
F
SGM2310A
REF.
RATINGS
A
B
C
D
E
F
Any changes of specification will not be informed individually.
VALUE
-55~150
Top View
0.01
83.3
5.0
4.0
1.5
±20
60
10
A
E
Min.
4.40
4.05
2.40
1.40
0.40
L
Millimeter
3.00 REF.
DS(ON)
G
SOT-89
C
Max.
4.60
4.25
2.60
1.60
0.52
115 mΩ
B
D
H
REF.
G
H
K
1
J
L
2
3
Min.
0.89
0.35
0.70
UNIT
W / ° C
UNIT
° C / W
-
Millimeter
1.50 REF.
W
A
A
° C
V
V
A
Page 1 of 4
Max.
1.20
0.41
0.80
-
4
J

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sgm2310a Summary of contents

Page 1

... Elektronische Bauelemente DESCRIPTION The SGM2310A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SGM2310A is universally used for all commercial-industrial applications. FEATURES Simple drive requirement Super high density cell design for extremely low R MARKING 2310A ...

Page 2

... d(on d(off 320 iss oss rss SOURCE-DRAIN DIODE SGM2310A 115 mΩ DS(ON) TEST CONDITIONS - 250µ 1 =250µ 15V ±100 ±20V GS 1 µA ...

Page 3

... Elektronische Bauelemente CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 16-Dec-2009 Rev. A SGM2310A 115 mΩ DS(ON) N-Channel Enhancement Mode Power MOSFET Any changes of specification will not be informed individually. Page ...

Page 4

... Elektronische Bauelemente CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 16-Dec-2009 Rev. A SGM2310A 115 mΩ DS(ON) N-Channel Enhancement Mode Power MOSFET Any changes of specification will not be informed individually. Page ...

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