sid100n12 Sirectifier Semiconductors, sid100n12 Datasheet - Page 2

• Manufacturer Part Number: sid100n12
• Description: Npt Igbt Modules
• Manufacturer: Sirectifier Semiconductors

IGBT
Inverse Diode
FWD
Thermal Characteristics
Mechanical Data
Characteristics
V
V
Symbol
R
E
R
V
V
R
F
V
F
R
R
V
CC'+EE'
on
I
CE(TO)
CE(sat)
I
th(j-c)FD
C
t
t
I
V
C
L
= V
th(j-c)D
M
GE(th)
CES
r
C
RRM
d(on)
d(off)
= V
Q
M
RRM
E
th(c-s)
th(j-c)
w
t
t
Q
E
(TO)
r
CE
(E
r
CE
(TO)
oes
r
f
res
T
ies
T
s
rr
rr
t
rr
under following conditions:
rr
off
EC
EC
)
V
V
T
V
I
under following conditions
V
res., terminal-chip T
under following conditions:
V
R
V
I
T
T
I
di/dt = 800A/us
V
I
T
T
I
di/dt = A/us
V
per IGBT
per Inverse Diode
per FWD
per module
to heatsink M6
to terminals M5
C
F
F
F
F
j
j
j
j
j
GE
GE
GE
GE
CC
GE
GE
GE
Gon
= 75A; V
= 75A; T
= 75A; V
=75A; T
= 25(125)
= 125
= 125
= 125
= 125
=75A; V
= V
= 0; V
= 15V, T
= 0, V
= 600V, I
= ± 15V
= V
= V
= R
CE
o
o
o
o
Goff
C
C
C
C
, I
j
CE
CE
GE
j
GE
GE
= 25
under following conditions:
= 25(125)
C
o
=15 , T
C
j
= V
= 25V, f = 1MHz
= 15V; chip level
C
=2mA
= 0V; T
= 0V; T
= 25(125)
= 75A
o
C
CES
; T
C
j
j
j
o
= 25(125)
= 25(125)
= 25(125)
Conditions
= 125
C
j
= 25(125)
o
C
NPT IGBT Modules
o
SID100N12
C
o
o
o
C
C
C
o
C
min.
4.5
2.5
T
3
C
= 25
1.85(1.6)
14.6(20) 18.6(25.3)
1.4(1.6)
2.5(3.1)
o
0.75(1)
3.5(11)
27(40)
30(45)
2(1.8)
C , unless otherwise specified
10(8)
3(10)
typ.
450
5.5
0.1
0.72
0.38
30
70
70
12
9
5
1.6(1.8)
3(3.7)
max.
0.5
0.36
0.18
0.05
0.9
60
140
600
90
160
6.5
0.3
6.6
0.5
2.5
1.2
2.2
1.2
30
15
11
5
5
Units
K/W
K/W
K/W
K/W
Nm
Nm
mA
m
m
m
nH
m
mJ
uC
mJ
uC
mJ
nF
ns
ns
ns
ns
V
V
V
V
V
A
V
V
A
g