mr2a16a ETC-unknow, mr2a16a Datasheet - Page 4

• Manufacturer Part Number: mr2a16a
• Description: 256k X 16-bit 3.3-v Asynchronous Magnetoresistive Ram
• Manufacturer: ETC-unknow

NOTES:
Input leakage current
Output leakage current
Output low voltage
Output high voltage
ac active supply current — Read Modes
(I
ac active supply current — Write Modes
(V
ac standby current
(V
(no other restrictions on other inputs)
CMOS standby current
(E t V
Electrical Specifications
Power supply voltage
Write inhibit voltage
Input high voltage
Input low voltage
Operating temperature
Direct Current (dc)
4
Out
(I
(I
(I
(I
V
(V
DD
DD
1. After power up or if V
2. V
3. V
OL
OL
OH
OH
In
DD
= 0 mA, V
d V
= max)
= max, E = V
Memory is designed to prevent writing for all input pin conditions if V
= +4 mA)
= +100 PA)
DD
= –4 mA)
= –100 mA)
= max, f = 0 MHz)
IH
IL
SS
(min) = –0.5 Vdc; V
(max) = V
– 0.2 V and
+ 0.2 V or tV
Parameter
Parameter
Parameter
DD
= max)
DD
IH
)
+ 0.3 Vdc; V
DD
DD
IL
falls below V
(min) = –2.0 Vac (pulse width d 10 ns) for I d 20.0 mA.
– 0.2 V)
IH
Table 6. Power Supply Characteristics
(max) = V
Table 4. Operating Conditions
WI
Table 5. dc Characteristics
, a waiting period of 1 Ps must be observed.
DD
Timing Set
Symbol
Symbol
+ 2.0 Vac (pulse width d 10 ns) for I d 20.0 mA.
I
I
lkg(O)
V
V
MR2A16A/D, Rev. 0.1
V
V
V
lkg(I)
V
T
20
25
35
20
25
35
20
25
35
OH
DD
OL
WI
IH
IL
A
V
Symbol
DD
–0.5
3.0
I
I
I
I
I
I
Min
Min
I
I
I
I
DDW
DDW
DDW
DDR
DDR
DDR
2.5
2.2
2.4
SB1
SB1
SB1
SB2
—
—
—
0
– 0.2
(1)
(3)
DD
falls below minimum V
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Typ
Typ
Typ
3.3
2.7
—
—
—
—
—
—
WI
Freescale Semiconductor
V
.
V
DD
SS
3.0
Max
Max
Max
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
3.6
0.8
0.4
+ 0.3
70
r1
r1
—
+ 0.2
(1)
(2)
Unit
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
PA
PA
°C
V
V
V
V
V
V