mrfe6p3300h Freescale Semiconductor, Inc, mrfe6p3300h Datasheet - Page 5

• Manufacturer Part Number: mrfe6p3300h
• Description: Rf Power Field Effect Transistor
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
21
20
19
18
17
16
1
I
DQ
1600 mA
2000 mA
1200 mA
800 mA
Figure 5. Two - Tone Power Gain versus
= 2400 mA
P
V
Two −Tone Measurements, 6 MHz Tone Spacing
out
DD
, OUTPUT POWER (WATTS) PEP
= 32 Vdc, f1 = 857 MHz, f2 = 863 MHz
10
Output Power
Figure 4. Single - Carrier OFDM Broadband Performance
Figure 3. Single - Carrier OFDM Broadband Performance
20.5
19.5
18.5
17.5
16.5
20.5
19.5
18.5
17.5
20
19
18
17
21
20
19
18
17
820
820
ACP −L
G
ps
TYPICAL NARROWBAND CHARACTERISTICS
830
830
η
D
ACP −U
100
840
IRL
840
V
I
64 QAM Data Carrier Modulation
5 Symbols
G
η
DQ
DD
ps
D
V
I
64 QAM Data Carrier Modulation
5 Symbols
@ 120 Watts Avg.
DQ
@ 60 Watts Avg.
= 1600 mA, 8K Mode OFDM
f, FREQUENCY (MHz)
DD
f, FREQUENCY (MHz)
= 32 Vdc, P
850
850
= 1600 mA, 8K Mode OFDM
= 32 Vdc, P
IRL
ACP −L
860
860
600
out
out
ACP −U
= 120 W (Avg.)
= 60 W (Avg.)
870
870
880
880
−10
−20
−30
−40
−50
−60
1
Figure 6. Third Order Intermodulation Distortion
V
Two −Tone Measurements, 6 MHz Tone Spacing
890
890
DD
= 32 Vdc, f1 = 857 MHz, f2 = 863 MHz
900
900
31
29
27
25
44
42
40
38
−45
−50
−55
−60
−65
−40
−45
−50
−55
−60
P
out
, OUTPUT POWER (WATTS) PEP
versus Output Power
MRFE6P3300HR3 MRFE6P3300HR5
10
1600 mA
I
0
0
DQ
−5
−10
−15
−20
−5
−10
−15
−20
1200 mA
= 800 mA
2000 mA
2400 mA
100
600
5