mrfe6s9125n Freescale Semiconductor, Inc, mrfe6s9125n Datasheet - Page 8

• Manufacturer Part Number: mrfe6s9125n
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

MRFE6S9125NR1 MRFE6S9125NBR1
8
22
21
20
19
18
17
16
15
14
1
G
Figure 11. Power Gain and Drain Efficiency
ps
25_C
P
T
versus CW Output Power
out
C
= −30_C
, OUTPUT POWER (WATTS) CW
85_C
10
η
D
10
10
10
10
8
7
6
5
90
Figure 13. MTTF versus Junction Temperature
V
I
f = 880 MHz
This above graph displays calculated MTTF in hours when the device is
operated at V
MTTF calculator available at http://www.freescale.com/rf. Select Tools
(Software & Tools)/Calculators to access MTTF calculators by product.
DQ
DD
TYPICAL CHARACTERISTICS
= 950 mA
= 28 Vdc
100
110
−30_C
85_C
DD
25_C
130
T
J
, JUNCTION TEMPERATURE (°C)
= 28 Vdc, P
300
80
70
60
50
40
30
20
10
0
150
out
= 27 W Avg., and η
170
21
20
19
18
17
16
0
190
Figure 12. Power Gain versus Output Power
40
210
D
= 31%.
P
out
80
230
, OUTPUT POWER (WATTS) CW
V
DD
250
120
= 24 V
Freescale Semiconductor
160
28 V
200
RF Device Data
I
f = 880 MHz
32 V
DQ
240
= 950 mA
280