mrf7s21170h Freescale Semiconductor, Inc, mrf7s21170h Datasheet - Page 8

• Manufacturer Part Number: mrf7s21170h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

MRF7S21170HR3 MRF7S21170HSR3
8
17
16
15
14
13
0.0001
0.001
0.01
0
100
0.1
10
1
Figure 12. Power Gain versus Output Power
64 DPCH, 50% Clipping, Single - Carrier Test Signal
0
Figure 14. CCDF W - CDMA 3GPP, Test Model 1,
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ "5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on
CCDF
P
out
Compressed Output
Signal @ 50 W P
2
, OUTPUT POWER (WATTS) CW
100
PEAK −TO−AVERAGE (dB)
4
V
out
DD
= 24 V
6
200
I
f = 2140 MHz
DQ
28 V
Input Signal
TYPICAL CHARACTERISTICS
= 1400 mA
W - CDMA TEST SIGNAL
8
32 V
280
10
−100
−110
10
10
10
10
−10
−20
−30
−40
−50
−60
−70
−80
−90
8
7
6
5
90
−9
Figure 13. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http:/www.freescale.com/rf. Select Tools/
Software/Application Software/Calculators to access the MTTF calcu−
lators by product.
Figure 15. Single - Carrier W - CDMA Spectrum
−7.2
110
−ACPR in 3.84 MHz
Integrated BW
−5.4
T
130
J
DD
, JUNCTION TEMPERATURE (°C)
−3.6
= 28 Vdc, P
f, FREQUENCY (MHz)
150
−1.8
Channel BW
3.84 MHz
out
170
0
= 50 W Avg., and η
Freescale Semiconductor
1.8
190
−ACPR in 3.84 MHz
Integrated BW
3.6
210
RF Device Data
D
5.4
= 31%.
230
7.2
250
9