mrf21120 Freescale Semiconductor, Inc, mrf21120 Datasheet - Page 2

• Manufacturer Part Number: mrf21120
• Description: The Rf Sub-micron Mosfet Line Rf Power Field Effect Trasistor N-channel Enhancement-mode Lateral Mosfet
• Manufacturer: Freescale Semiconductor, Inc

(1) Each side of device measured separately.
(2) Device measured in push–pull configuration.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS (1)
ON CHARACTERISTICS (1)
DYNAMIC CHARACTERISTICS (1)
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2)
MRF21120
Drain–Source Breakdown Voltage
Gate–Source Leakage Current
Zero Gate Voltage Drain Leakage Current
Forward Transconductance
Gate Threshold Voltage
Gate Quiescent Voltage
Drain–Source On–Voltage
Reverse Transfer Capacitance
Common–Source Amplifier Power Gain
Drain Efficiency
Intermodulation Distortion
Input Return Loss
Common–Source Amplifier Power Gain
Common–Source Amplifier Power Gain
Drain Efficiency
Intermodulation Distortion
Input Return Loss
Power Output, 1 dB Compression Point
2
(V
(V
(V
(V
(V
(V
(V
(V
(V
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
(V
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
(V
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
(V
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
(V
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
(V
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
(V
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
(V
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
(V
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
(V
GS
GS
DS
DS
DS
DS
GS
DS
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
= 0 Vdc, I
= 5 Vdc, V
= 28 Vdc, V
= 10 Vdc, I
= 10 V, I
= 28 V, I
= 10 V, I
= 28 Vdc, V
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, CW, I
D
D
D
D
= 200 µA)
= 500 mA)
= 2 A)
DS
D
= 20 µAdc)
GS
GS
out
out
out
out
out
out
out
out
out
= 2 Adc)
= 0 Vdc )
= 0 Vdc)
= 0, f = 1 MHz)
= 120 W PEP, I
= 120 W PEP, I
= 120 W PEP, I
= 120 W PEP, I
= 120 W PEP, I
= 120 W PEP, I
= 120 W PEP, I
= 120 W PEP, I
= 120 W PEP, I
DQ
= 2
Characteristic
500 mA, f1 = 2170.0 MHz)
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
(T
= 2
= 2
= 2
= 2
= 2
= 2
= 2
= 2
= 2
C
= 25°C unless otherwise noted)
500 mA,
500 mA,
500 mA,
500 mA,
500 mA,
500 mA,
500 mA,
500 mA,
500 mA,
V
Symbol
V
V
V
(BR)DSS
P1dB
I
I
DS(on)
C
IMD
IMD
GS(th)
GS(Q)
G
G
G
GSS
IRL
IRL
DSS
g
η
η
rss
fs
ps
ps
ps
10.5
Min
2.5
65
30
—
—
—
—
—
—
—
—
—
—
—
—
—
3
MOTOROLA RF DEVICE DATA
0.38
11.4
34.5
11.5
11.5
34.5
Typ
–31
–12
–31
–12
120
4.8
3.9
2.8
—
—
—
3
Max
–28
3.8
0.5
10
–9
—
—
—
—
—
—
—
—
—
—
—
1
5
Watts
µAdc
µAdc
Unit
Vdc
Vdc
Vdc
Vdc
dB
dB
dB
dB
dB
dB
dB
pF
%
%
S