mrf9200l Freescale Semiconductor, Inc, mrf9200l Datasheet

mrf9200l

Manufacturer Part Number

mrf9200l

Description

Rf Power Field Effect Transistors

Manufacturer

Freescale Semiconductor, Inc

Datasheet

1.MRF9200L.pdf (12 pages)

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RF Device Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

frequencies to 1000 MHz. The high gain and broadband performance of these

devices make them ideal for large - signal, common - source amplifier applica-

tions in 26 volt base station equipment.

• Typical Single - Carrier N - CDMA Performance @ 880 MHz: V

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 40 Watts CW

Features

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Low Gold Plating Thickness on Leads, 40

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

Drain- Source Voltage

Gate- Source Voltage

Total Device Dissipation @ T

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

Thermal Resistance, Junction to Case

Designed for broadband commercial and industrial applications with

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz.

Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.

Output Power

Derate above 25°C

Case Temperature 60°C, 200 W CW

Case Temperature 80°C, 40 W CW

Power Gain — 17.5 dB

Drain Efficiency — 25%

ACPR @ 750 kHz Offset — - 46.5 dBc in 30 kHz Bandwidth

access the MTTF calculators by product.

Select Documentation/Application Notes - AN1955.

= 2400 mA, P

out

= 40 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,

= 25°C

Characteristic

Rating

″ Nominal.

= 26 Volts,

Symbol

DSS

θJC

stg

CASE 465B - 03, STYLE 1

CASE 465C - 02, STYLE 1

Document Number: MRF9200L

880 MHz, 40 W AVG., 26 V

MRF9200LSR3

MRF9200LR3

LATERAL N - CHANNEL

MRF9200LR3

RF POWER MOSFETs

NI - 880S

NI - 880

MRF9200LR3 MRF9200LSR3

SINGLE N - CDMA

- 65 to +150

Value

- 0.5, +65

- 0.5, +15

Value

0.28

0.34

625

150

200

3.6

(1,2)

Rev. 3, 5/2006

W/°C

°C/W

Unit

Vdc

°C

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