mrf553 Microsemi Corporation, mrf553 Datasheet - Page 2

• Manufacturer Part Number: mrf553
• Description: Rf & Microwave Discrete Low Power Transistors
• Manufacturer: Microsemi Corporation

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ELECTRICAL SPECIFICATIONS (Tcase = 25 C)
STATIC
(off)
DYNAMIC
(on)
Symbol
Symbol
BVCEO
BVCBO
BVEBO
BVCES
ICES
COB
HFE
Collector-Emitter Breakdown Voltage
(IC=10 mAdc, IB=0)
Collector-Emitter Sustaining Voltage
(IC = 5.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IE = 0, IC = 5 mAdc)
Emitter-Base Breakdown Voltage
(IE = 1 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0 Vdc)
DC Current Gain
(IC = 250 mAdc, VCE = 5.0 Vdc) Both
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Test Conditions
Test Conditions
Min.
Min.
4.0
16
36
36
30
-
-
Value
Value
Typ.
Typ.
12
-
-
-
-
-
-
MRF553G
MRF553
Max.
Max.
200
20
5
-
-
-
-
Unit
Unit
Vdc
Vdc
Vdc
Vdc
Rev A 9/2005
mA
pF
-