mrf1535t1 Freescale Semiconductor, Inc, mrf1535t1 Datasheet - Page 2

• Manufacturer Part Number: mrf1535t1
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

MRF1535T1 MRF1535FT1
2
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
RF Characteristics (In Freescale Test Fixture)
Drain- Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Source Leakage Current
Gate Threshold Voltage
Drain- Source On - Voltage
Drain- Source On - Voltage
Input Capacitance (Includes Input Matching Capacitance)
Output Capacitance
Reverse Transfer Capacitance
Common - Source Amplifier Power Gain
Drain Efficiency
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
GS
DS
GS
DS
GS
GS
DS
DS
DS
DD
DD
= 60 Vdc, V
= 12.5 Vdc, I
= 12.5 Vdc, V
= 12.5 Vdc, V
= 12.5 Vdc, V
= 0 Vdc, I
= 10 Vdc, V
= 5 Vdc, I
= 10 Vdc, I
= 12.5 Vdc, P
= 12.5 Vdc, P
D
D
D
= 100 μAdc)
= 0.6 A)
GS
DS
D
= 2.0 Adc)
GS
GS
GS
out
out
= 400 μA)
= 0 Vdc)
= 0 Vdc)
= 35 Watts, I
= 35 Watts, I
= 0 V, f = 1 MHz)
= 0 V, f = 1 MHz)
= 0 V, f = 1 MHz)
Characteristic
DQ
DQ
(T
= 500 mA)
= 500 mA)
C
= 25°C unless otherwise noted)
f = 520 MHz
f = 520 MHz
V
Symbol
R
V
V
(BR)DSS
I
I
C
DS(on)
DS(on)
C
GS(th)
C
G
DSS
GSS
oss
η
rss
iss
ps
Min
60
10
50
—
—
—
—
—
—
—
1
Typ
Freescale Semiconductor
—
—
—
—
—
—
—
—
—
—
—
Max
250
150
0.3
2.6
0.7
20
—
—
—
1
1
RF Device Data
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
pF
pF
pF
dB
%
Ω