mrf1570t1 Freescale Semiconductor, Inc, mrf1570t1 Datasheet - Page 14

• Manufacturer Part Number: mrf1570t1
• Description: N - Channel Enhancement - Mode Lateral Mosfets
• Manufacturer: Freescale Semiconductor, Inc

MOUNTING
assumes a majority of the 0.170″ x 0.608″ source contact on
the back side of the package is in good contact with an ap-
propriate heat sink. As with all RF power devices, the goal of
the thermal design should be to minimize the temperature at
the back side of the package.
AMPLIFIER DESIGN
bipolar transistors are suitable for this device. For examples
see Freescale Application Note AN721, “Impedance
Matching Networks Applied to RF Power Transistors.”
Large - signal impedances are provided, and will yield a good
MRF1570T1 MRF1570FT1
14
The specified maximum thermal resistance of 0.75°C/W
Impedance matching networks similar to those used with
first pass approximation.
unilateral. This coupled with the very high gain of this device
yields a device capable of self oscillation. Stability may be
achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. The RF test fix-
ture implements a parallel resistor and capacitor in series
with the gate, and has a load line selected for a higher effi-
ciency, lower gain, and more stable operating region. See
Freescale Application Note AN215A, “RF Small - Signal
Design Using Two - Port Parameters” for a discussion of two
port network theory and stability.
Since RF power MOSFETs are triode devices, they are not
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RF Device Data