mrf18060blr3 Freescale Semiconductor, Inc, mrf18060blr3 Datasheet - Page 7
mrf18060blr3
Manufacturer Part Number
mrf18060blr3
Description
Rf Power Field Effect Transistor
Manufacturer
Freescale Semiconductor, Inc
Datasheet
1.MRF18060BLR3.pdf
(12 pages)
RF Device Data
Freescale Semiconductor
Figure 10. Series Equivalent Source and Load Impedance
Z
Z
Input
Matching
Network
source
load
1700
1800
1900
2000
2100
MHz
f
= Test circuit impedance as measured from
= Test circuit impedance as measured
V
DD
f = 1700 MHz
gate to ground.
from drain to ground.
Z
= 26 V, I
source
0.60 - j2.53
0.80 - j3.20
0.92 - j3.42
1.07 - j3.59
1.31 - j4.00
Z
DQ
source
Device
Under Test
Z
Ω
source
= 500 mA, P
Z
o
= 5 Ω
Z
load
f = 2100 MHz
out
Z
load
= 60 W CW
f = 2100 MHz
2.27 - j3.44
2.05 - j3.05
1.90 - j2.90
1.64 - j2.88
1.29 - j2.99
Z
f = 1700 MHz
load
Ω
Output
Matching
Network
MRF18060BLR3 MRF18060BLSR3
7