mrf6v2300n Freescale Semiconductor, Inc, mrf6v2300n Datasheet - Page 6

• Manufacturer Part Number: mrf6v2300n
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

6
MRF6V2300NR1 MRF6V2300NBR1
24
28
26
22
20
18
16
14
0
Figure 10. Power Gain versus Output Power
V
DD
50
= 20 V
100
P
25 V
out
, OUTPUT POWER (WATTS) CW
150
30 V
200
35 V
29
28
27
26
25
24
23
22
25
24
23
22
21
20
19
18
17
16
15
Figure 13. VHF Broadcast Broadband Performance
250
160
5
40 V
25_C
IMD3
η
Figure 12. Power Gain and Drain Efficiency
G
D
ps
300
170
T
V
I
C
DQ
TYPICAL CHARACTERISTICS
10
DD
I
f = 220 MHz
= −30_C
45 V
DQ
= 1100 mA, Tone−Spacing = 100 kHz
= 50 V, P
85_C
= 900 mA
180
350
P
versus CW Output Power
out
50 V
, OUTPUT POWER (WATTS) CW
out
η
f, FREQUENCY (MHz)
400
190
D
= 300 W (Peak)
G
ps
200
210
100
60
55
50
45
40
35
V
f = 220 MHz
10
85_C
I
DQ
DD
= 900 mA
= 50 Vdc
220
Figure 11. Power Output versus Power Input
25_C
15
230
−30_C
600
240
P
in
80
70
60
50
40
30
20
10
65
60
55
50
45
40
35
30
25
20
15
, INPUT POWER (dBm)
20
25_C
Freescale Semiconductor
−28
−29
−30
−31
−32
−33
25
T
C
= −30_C
85_C
V
I
f = 220 MHz
RF Device Data
DQ
DD
= 900 mA
30
= 50 Vdc
35