mrf6v13250hr3 Freescale Semiconductor, Inc, mrf6v13250hr3 Datasheet - Page 2

• Manufacturer Part Number: mrf6v13250hr3
• Description: 1300 Mhz, 250 W, 50 V Lateral N-channel Rf Power Mosfets
• Manufacturer: Freescale Semiconductor, Inc

2
MRF6V13250HR3 MRF6V13250HSR3
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
Pulsed, 200 μsec Pulse Width, 10% Duty Cycle
Typical CW Performance (In Freescale Test Fixture, 50 ohm system) V
Load Mismatch (In Freescale Application Test Fixture, 50 ohm system) V
f = 1300 MHz, Pulsed, 200 μsec Pulse Width, 10% Duty Cycle
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Gate--Source Leakage Current
Drain--Source Breakdown Voltage
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain--Source On--Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Input Return Loss
Power Gain
Drain Efficiency
Input Return Loss
VSWR 10:1 at all Phase Angles
1. Part internally input matched.
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
GS
GS
DS
DS
DS
DD
GS
DS
DS
DS
= 5 Vdc, V
= 0 Vdc, I
= 50 Vdc, V
= 90 Vdc, V
= 10 Vdc, I
= 50 Vdc, I
= 10 Vdc, I
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc, V
D
DS
D
D
D
= 50 mA)
GS
GS
GS
= 640 μAdc)
= 100 mAdc, Measured in Functional Test)
= 1.58 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
(1)
Characteristic
Test Methodology
(T
A
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 50 Vdc, I
DD
DD
= 50 Vdc, I
= 50 Vdc, I
DQ
Symbol
V
V
V
V
I
I
I
C
DS(on)
C
(BR)DSS
GS(th)
GS(Q)
C
G
G
= 100 mA, P
IRL
IRL
GSS
DSS
DSS
η
η
Ψ
oss
rss
iss
ps
ps
D
D
DQ
DQ
= 10 mA, P
= 100 mA, P
out
21.5
53.5
Min
120
1.0
2.0
0.1
—
—
—
—
—
—
—
—
—
—
= 250 W Peak (25 W Avg.), f = 1300 MHz
No Degradation in Output Power
out
= 230 W CW, f = 1300 MHz, T
out
= 250 W Peak (25 W Avg.),
0.25
22.7
57.0
20.0
53.0
Typ
340
--18
--25
1.8
2.4
1.2
58
—
—
—
—
IV (Minimum)
B (Minimum)
2 (Minimum)
Class
Freescale Semiconductor
Max
24.0
2.7
3.0
0.3
10
20
—
—
—
—
—
--9
—
—
—
1
RF Device Data
C
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
Vdc
dB
dB
dB
dB
pF
pF
pF
%
= 61°C
%