mrf6s9125n Freescale Semiconductor, Inc, mrf6s9125n Datasheet - Page 3

• Manufacturer Part Number: mrf6s9125n
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) V
P
Typical CW Performances (In Freescale GSM Test Fixture, 50 οhm system) V
921 - 960 MHz
out
Power Gain
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
Power Gain
Drain Efficiency
Input Return Loss
P
out
(f = 880 MHz)
= 60 W Avg., 921 - 960 MHz, EDGE Modulation
@ 1 dB Compression Point, CW
Characteristic
(T
C
= 25°C unless otherwise noted)
Symbol
(continued)
DD
P1dB
EVM
SR1
SR2
G
G
IRL
η
η
ps
ps
D
D
= 28 Vdc, I
Min
DQ
—
—
—
—
—
—
—
—
—
DD
= 700 mA, P
= 28 Vdc, I
MRF6S9125NR1 MRF6S9125NBR1
Typ
125
- 63
- 78
- 12
1.8
20
40
19
62
DQ
out
= 700 mA,
= 125 W,
Max
—
—
—
—
—
—
—
—
—
% rms
Unit
dBc
dBc
dB
dB
dB
W
%
%
3