2sj556 ETC-unknow, 2sj556 Datasheet
2sj556
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2sj556 Summary of contents
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... Silicon P Channel MOS FET High Speed Power Switching Features Low on-resistance R = 0.028 typ. DS(on) Low drive current. 4V gate drive devices. High speed switching. Outline 2SJ556 ADE-208-645A (Z) 2nd. Edition Jun 1998 ...
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... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current I Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note duty cycle 2. Value 25°C 3. Value at Tch = 25° ...
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... Main Characteristics 2SJ556 3 ...
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... Package Dimensions 8 Unit: mm ...
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... Hitachi product. 5. This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. 2SJ556 9 ...