si5515cdc Vishay, si5515cdc Datasheet - Page 5

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si5515cdc

Manufacturer Part Number
si5515cdc
Description
N- And P-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68747
S-81545-Rev. A, 07-Jul-08
100
0.1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
T
J
V
0.3
SD
= 150 °C
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
25
- Temperature (°C)
0.6
50
I
D
= 250 µA
75
T
J
= 25 °C
0.01
100
0.1
10
100
0.9
1
0.1
Safe Operating Area, Junction-to-Ambient
Single Pulse
* V
T
125
A
GS
Limited by R
= 25 °C
> minimum V
V
150
1.2
DS
- Drain-to-Source Voltage (V)
1
DS(on)
GS
*
at which R
BVDSS
Limited
10
DS(on)
0.06
0.05
0.04
0.03
0.02
0.01
0.00
40
30
20
10
0
10
0
is specified
-4
100 µs
1 ms
100 ms
1 s
10 s
DC
10 ms
On-Resistance vs. Gate-to-Source Voltage
10
-3
100
V
GS
2
10
- Gate-to-Source Voltage (V)
-2
Single Pulse Power
10
Time (s)
-1
4
Vishay Siliconix
1
Si5515CDC
T
T
10
I
D
J
J
www.vishay.com
= 25 °C
= 125 °C
= 6 A
6
100
1000
8
5

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