si5419du Vishay, si5419du Datasheet - Page 4

• Manufacturer Part Number: si5419du
• Description: P-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Si5419DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
2.2
2.0
1.8
1.6
1.4
1.2
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
T
J
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
= 150 °C
T
J
25
- Temperature (°C)
I
D
= 250 µA
0.6
50
75
0.8
0.01
100
0.1
10
100
1
T
0.1
J
= 25 °C
* V
1.0
Single Pulse
Limited by R
125
T
GS
A
= 25 °C
> minimum V
V
150
1.2
DS
Safe Operating Area
- Drain-to-Source Voltage (V)
DS(on)
1
GS
*
at which R
BVDSS Limited
10
DS(on)
0.06
0.05
0.04
0.03
0.02
0.01
10
40
30
20
50
0
is specified
0
0.001
0
On-Resistance vs. Gate-to-Source Voltage
100 µA
1 ms
10 ms
100 ms
1 s
10 s
DC
I
D
= 6.6 A
0.01
100
2
V
GS
Single Pulse Power
- Gate-to-Source Voltage (V)
0.1
4
Time (s)
1
S-82656-Rev. A, 03-Nov-08
Document Number: 69001
6
10
T
J
T
= 25 °C
J
= 125 °C
8
100
1000
10