si5402dc-t1 Vishay, si5402dc-t1 Datasheet
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si5402dc-t1
Manufacturer Part Number
si5402dc-t1
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet
1.SI5402DC-T1.pdf
(1 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI5402DC-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
b.
c.
Document Number: 71062
S-21251—Rev. C, 05-Aug-02
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
i
DS
30
30
Ordering Information: Si5402DC-T1
(V)
J
ti
t A bi
D
1206-8 ChipFETt
J
J
D
a
a
0.055 @ V
0.035 @ V
t
= 150_C)
= 150_C)
Bottom View
a
a
Parameter
Parameter
D
r
D
DS(on)
S
D
a
a
GS
GS
D
(Ω)
N-Channel 30-V (D-S) MOSFET
= 4.5 V
= 10 V
1
G
a
b, c
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
T
T
T
T
t ≤ 5 sec
A
A
A
A
I
= 25_C
= 85_C
= 25_C
= 85_C
D
6.7
5.3
(A)
Marking Code
AA XX
Part # Code
Symbol
Symbol
T
R
R
R
Lot Traceability
and Date Code
V
J
V
I
P
P
DM
, T
I
I
I
thJA
thJF
DS
GS
D
D
S
D
D
stg
Typical
5 secs
6.7
4.8
2.1
2.5
1.3
40
80
15
G
--55 to 150
20
20
N-Channel MOSFET
260
30
Steady State
Maximum
Vishay Siliconix
D
S
4.9
3.5
1.1
1.3
0.7
50
95
20
Si5402DC
www.vishay.com
Unit
Unit
_C/W
C/
_C
_C
W
W
V
V
A
A
2-1