si3588dv Vishay, si3588dv Datasheet - Page 4

• Manufacturer Part Number: si3588dv
• Description: N-/p-channel 20-v D-s Rated Mosfet
• Manufacturer: Vishay

Si3588DV
Vishay Siliconix
www.vishay.com
4
–0.0
–0.1
–0.2
–0.3
–0.4
0.2
0.1
0.1
0.01
10
0.1
1
–50
0.00
2
1
10
–4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
–25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
– Source-to-Drain Voltage (V)
J
T
Threshold Voltage
I
= 150_C
D
J
0.4
10
– Temperature (_C)
= 250 mA
25
–3
Single Pulse
50
0.6
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.8
T
10
J
100
–2
= 25_C
1.0
_
125
Square Wave Pulse Duration (sec)
150
1.2
New Product
10
–1
1
0.30
0.25
0.20
0.15
0.10
0.05
0.00
8
6
4
2
0
0.01
0
Single Pulse Power (Junction-to-Ambient)
On-Resistance vs. Gate-to-Source Voltage
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
V
Notes:
1
P
GS
DM
JM
0.1
– Gate-to-Source Voltage (V)
– T
A
t
1
= P
Time (sec)
t
2
2
DM
I
D
Z
= 3.0 A
thJA
thJA
100
t
t
(t)
1
2
S-02383—Rev. A, 23-Oct-00
= 130_C/W
1
Document Number: 71332
3
600
4
10
30
5