si3850adv Vishay, si3850adv Datasheet - Page 7

• Manufacturer Part Number: si3850adv
• Description: Complementary Mosfet Half-bridge N- And P-channel
• Manufacturer: Vishay

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 73789
S-60470-Rev. A, 27-Mar-06
0.001
- 0.1
- 0.2
0.01
0.4
0.3
0.2
0.1
0.0
0.1
10
- 50
1
0.0
Source-Drain Diode Forward Voltage
- 25
0.4
V
SD
0
T
T
J
Threshold Voltage
– Source-to-Drain Voltage (V)
J
= 150 °C
– Temperature (°C)
25
0.8
50
25 °C
1.2
75
I
0.01
D
0.1
10
= 250 µA
1
0.1
100
* V
*Limited by r
1.6
I
D
GS
Single Pulse
= 5 mA
T
125
A
= 25 °C
V
minimum V
DS
150
2.0
– Drain-to-Source Voltage (V)
DS(on)
Safe Operating Area
1
GS
BV
DSS
at which r
Limited
DS(on)
10
is specified
3.0
2.4
1.8
1.2
0.6
0.0
24
18
12
30
0.001
6
0
100 ms
1 ms
10 ms
dc
1 s
10 s
0
Single Pulse Power vs. Junction-to-Ambient
On-Resistance vs. Gate-to-Source Voltage
100
V
1
0.01
GS
– Gate-to-Source Voltage (V)
Time (sec)
2
25 °C
Vishay Siliconix
0.1
Si3850ADV
3
125 °C
www.vishay.com
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