si3430dv Vishay, si3430dv Datasheet - Page 2

• Manufacturer Part Number: si3430dv
• Description: N-channel 100-v D-s Mosfet
• Manufacturer: Vishay

Notes
a.
b.
www.vishay.com
2
Si3430DV
Vishay Siliconix
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
V
GS
b
8
6
4
2
0
= 10 thru 6 V
0.0
Parameter
0.5
a
a
V
DS
1.0
a
Output Characteristics
- Drain-to-Source Voltage (V)
1.5
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
2.0
2.5
Symbol
V
r
r
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
R
t
t
SD
t
rr
fs
gs
gd
r
f
g
g
g
3.0
3.5
5 V
4 V
4.0
V
V
I
DS
D
DS
^ 1 A, V
I
= 50 V, V
F
V
= 80 V, V
V
V
V
V
V
V
V
V
V
DS
= 1.7 A, di/dt = 100 A/ms
I
DS
DS
Test Condition
GS
GS
DS
S
GS
DS
DD
DD
= 1.7 A, V
= 0 V, V
= V
w 5 V, V
= 10 V, I
= 6.0 V, I
= 15 V, I
= 0.1 V, f = 5 MHz
= 80 V, V
= 50 V, R
= 50 V, R
GEN
GS
GS
GS
, I
= 10 V, R
GS
= 10 V, I
= 0 V, T
D
D
GS
GS
D
D
GS
L
L
= 250 mA
= "20 V
= 2.4 A
= 2.3 A
= 2.4 A
= 50 W
= 50 W
= 10 V
= 0 V
= 0 V
J
D
G
8
6
4
2
0
= 85_C
= 2.4 A
= 6 W
0
1
V
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
Min
2
2
8
1
T
C
25_C
= 125_C
3
0.148
0.160
Typ
0.8
5.5
1.5
1.4
2.8
16
50
11
S-31725—Rev. B, 18-Aug-03
7
9
9
Document Number: 71235
4
Max
"100
0.170
0.185
1.2
6.6
25
20
20
30
20
80
1
4
- 55_C
5
Unit
nC
nA
mA
mA
ns
ns
ns
W
W
W
W
V
A
S
V
6