si3433 Vishay, si3433 Datasheet
si3433
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si3433 Summary of contents
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... 85_C 25_C 85_C stg Symbol Typical sec R R thJA Steady State Steady State R thJF Si3433 Vishay Siliconix Steady State Unit - "8 - 4.3 - 5.6 - 4 1.7 - 0.9 2.0 1 1.0 0 150 _C Maximum Unit 45 62.5 90 110 _C/W C www ...
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... Si3433 Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...
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... C oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1.4 1.2 1.0 0.8 0 100 T - Junction Temperature (_C) J On-Resistance vs. Gate-to-Source Voltage 0.15 0. 5.6 A 0.09 D 0.06 0.03 0. Gate-to-Source Voltage (V) GS Si3433 16 20 125 150 4 5 www.vishay.com 2-3 ...
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... Si3433 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 250 mA D 0.2 0.1 0.0 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...