si3440dv Vishay, si3440dv Datasheet

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si3440dv

Manufacturer Part Number
si3440dv
Description
N-channel 150-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Notes
a.
Document Number: 72380
S-32412—Rev. B, 24-Nov-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Single Avalanche Current
Single Avalanche Energy (Duty Cycle v1%)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
150
150
(V)
J
ti
3 mm
t A bi
Ordering Information: Si3440DV-T1—E3
J
J
a
a
0.400 @ V
0.375 @ V
= 175_C)
= 175_C)
t
a
a
Parameter
Parameter
r
DS(on)
1
2
3
Top View
TSOP-6
2.85 mm
a
a
GS
GS
N-Channel 150-V (D-S) MOSFET
(W)
= 6.0 V
= 10 V
6
5
4
a
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
L = 0 1 mH
L = 0.1 mH
T
T
T
T
t v 5 sec
A
A
A
A
New Product
I
= 25_C
= 85_C
= 25_C
= 85_C
D
1.5
1.4
(A)
Symbol
Symbol
T
(3) G
R
R
R
V
J
V
E
I
I
P
P
DM
, T
I
I
AS
I
thJA
thJF
DS
GS
D
D
AS
S
D
D
stg
N-Channel MOSFET
(1, 2, 5, 6) D
FEATURES
D TrenchFETr Power MOSFET
D PWM Optimized for Fast Switching In Small
D 100% R
APPLICATIONS
D Primary Side Switch for Low Power DC/DC
(4) S
Footprint
Converters
Typical
5 secs
1.5
1.1
1.7
2.0
1.0
45
90
25
g
Tested
−55 to 150
"20
150
0.8
6
4
Steady State
Maximum
Vishay Siliconix
1.14
0.59
62.5
110
1.2
0.8
1.0
30
Si3440DV
www.vishay.com
Unit
Unit
_C/W
C/W
mJ
_C
W
W
V
V
A
A
A
1

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si3440dv Summary of contents

Page 1

... TSOP-6 Top View 2.85 mm Ordering Information: Si3440DV-T1—E3 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 175_C) = 175_C Pulsed Drain Current Single Avalanche Current Single Avalanche Energy (Duty Cycle v1%) ...

Page 2

... Si3440DV Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...

Page 3

... V − Source-to-Drain Voltage (V) SD Document Number: 72380 S-32412—Rev. B, 24-Nov-03 New Product 25_C J 0.8 1.0 1.2 Si3440DV Vishay Siliconix Capacitance 320 C iss 240 160 80 C rss C oss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 2 ...

Page 4

... Si3440DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 0 250 mA D 0.0 −0.4 −0.8 −1.2 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com 4 New Product ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Document Number: 72380 S-32412—Rev. B, 24-Nov-03 New Product −2 − Square Wave Pulse Duration (sec) Si3440DV Vishay Siliconix 1 10 www.vishay.com 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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