si3457cdv Vishay, si3457cdv Datasheet

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si3457cdv

Manufacturer Part Number
si3457cdv
Description
P-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number:
si3457cdv-T1-GE3
0
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 110 °C/W.
Document Number: 68602
S09-0131-Rev. B, 02-Feb-09
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
- 30
(V)
C
Ordering Information: Si3457CDV-T1-E3 (Lead (Pb)-free)
= 25 °C.
0.113 at V
0.074 at V
3 mm
R
DS(on)
GS
GS
J
(Ω)
= - 4.5 V
= - 10 V
= 150 °C)
b, d
Si3457CDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
Top View
1
2
3
TSOP-6
2.85 mm
P-Channel 30-V (D-S) MOSFET
I
6
5
4
D
- 5.1
- 4.1
(A)
Steady State
a
T
T
T
T
T
T
T
T
T
T
t ≤ 5 s
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
5.1 nC
g
(Typ.)
New Product
Marking Code
Symbol
AT
R
R
thJA
thJF
Symbol
T
XXX
J
V
V
Part # Code
I
P
, T
DM
I
I
GS
DS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• Load Switch
Available
TrenchFET
Lot Traceability
and Date Code
Typical
55
34
®
Power MOSFET
- 55 to 150
- 1.67
- 4.1
- 3.3
2.0
1.3
Limit
± 20
- 5.1
- 4.1
- 2.5
- 30
- 20
(3) G
3.0
2.0
b, c
b, c
b, c
b, c
b, c
P-Channel MOSFET
Maximum
(1, 2, 5, 6) D
62.5
41
Vishay Siliconix
(4) S
Si3457CDV
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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si3457cdv Summary of contents

Page 1

... 4 TSOP-6 Top View 2.85 mm Ordering Information: Si3457CDV-T1-E3 (Lead (Pb)-free) Si3457CDV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current ...

Page 2

... Si3457CDV Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... 2.0 2.5 3.0 800 600 400 200 Si3457CDV Vishay Siliconix ° ° 125 ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss ...

Page 4

... Si3457CDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2 250 µA D 2.0 1.8 1.6 1.4 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.25 0.20 0. °C J 0.10 0.05 0.00 1.0 1.2 1 100 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68602 S09-0131-Rev. B, 02-Feb-09 New Product 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si3457CDV Vishay Siliconix 100 125 T - Case Temperature (°C) C Power, Junction-to-Foot www.vishay.com 150 5 ...

Page 6

... Si3457CDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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