sum65n20-30 Vishay, sum65n20-30 Datasheet

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sum65n20-30

Manufacturer Part Number
sum65n20-30
Description
N-channel 200-v D-s 175c Mosfet
Manufacturer
Vishay
Datasheet

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Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When Mounted on 1" square PCB (FR-4 material).
Document Number: 71702
S-80272-Rev. D, 11-Feb-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
V
(BR)DSS
200
Ordering Information: SUM65N20-30-E3 (Lead (Pb)-free)
(V)
G
TO-263
Top View
0.030 at V
D
r
N-Channel 200-V (D-S) 175 °C MOSFET
J
b
DS(on)
S
= 175 °C)
b
GS
(Ω)
= 10 V
C
= 25 °C, unless otherwise noted
I
PCB Mount (TO-263)
D
65
(A)
a
T
T
T
L = 0.1 mH
T
C
A
C
C
= 125 °C
= 25 °C
= 25 °C
= 25 °C
d
FEATURES
APPLICATIONS
• TrenchFET
• 175 °C Junction Temperature
• Low Thermal Resistance Package
• 100 % R
• Isolated DC/DC Converters
d
Symbol
Symbol
T
R
J
R
V
V
E
I
g
I
P
, T
DM
I
AS
thJC
GS
thJA
DS
AS
D
D
Tested
®
stg
Power MOSFET
G
N-Channel MOSFET
- 55 to 175
Limit
Limit
± 20
375
3.75
D
S
200
140
65
37
0.4
35
61
40
SUM65N20-30
a
a
c
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1

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sum65n20-30 Summary of contents

Page 1

... DS(on) 0.030 200 GS TO-263 Top View Ordering Information: SUM65N20-30-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current b Single Pulse Avalanche Energy b Maximum Power Dissipation ...

Page 2

... SUM65N20-30 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... S-80272-Rev. D, 11-Feb- 0.060 °C C 0.045 25 °C 125 °C 0.030 0.015 0.000 80 100 120 100 125 150 SUM65N20-30 Vishay Siliconix 140 120 100 125 ° ° Gate-to-Source Voltage (V) GS ...

Page 4

... SUM65N20-30 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3 2.5 2.0 1.5 1.0 0.5 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 1000 100 150 ° 0.1 0.00001 0.0001 0.001 t (s) in Avalanche Current vs. Time www.vishay.com ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71702. Document Number: 71702 S-80272-Rev. D, 11-Feb-08 100 125 150 175 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUM65N20-30 Vishay Siliconix 1000 r DS(on) Limited* 100 °C C Single Pulse 0.1 0.1 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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