sum110n08-07 Vishay, sum110n08-07 Datasheet
sum110n08-07
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sum110n08-07 Summary of contents
Page 1
... 25_C 25_C Symbol c PCB Mount R thJA R thJC SUM110N08-07 Vishay Siliconix FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance Package APPLICATIONS D Automotive - Boardnet 42-V EPS and ABS - Motor Drives D High Current D DC/DC Converters Limit 75 "20 110 63 350 75 280 b 200 3 ...
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... SUM110N08-07 Vishay Siliconix SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... Drain-to-Source Voltage (V) DS Document Number: 71829 S-21863—Rev. C, 21-Oct-02 New Product 0.010 0.008 25_C 0.006 125_C 0.004 0.002 0.000 SUM110N08-07 Vishay Siliconix Transfer Characteristics 200 160 120 125_C C 40 25_C Gate-to-Source Voltage (V) GS On-Resistance vs ...
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... SUM110N08-07 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (_C) J Avalanche Current vs. Time 1000 100 150_C AV A 0.1 0.00001 0.0001 0.001 0.01 t (Sec) in www.vishay.com 4 New Product 100 10 1 100 ...
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... S-21863—Rev. C, 21-Oct-02 New Product 1000 100 10 1 0.1 125 150 175 0.1 Normalized Thermal Transient Impedance, Junction-to-Case - Square Wave Pulse Duration (sec) SUM110N08-07 Vishay Siliconix Safe Operating Area 100 Limited by r DS(on 100 25_C C Single Pulse 1 10 ...