si1965dh Vishay, si1965dh Datasheet - Page 4

• Manufacturer Part Number: si1965dh
• Description: Dual P-channel 12-v D-s Mosfet
• Manufacturer: Vishay

Si1965DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.8
0.7
0.6
0.5
0.4
0.3
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
0.4
- Source-to-Drain Voltage (V)
Threshold Voltage
T
T
J
J
25
- Temperature (°C)
= 150 °C
0.6
50
0.8
0.01
0.1
75
10
1
0.1
I
1.0
D
T
100
= 250 µA
Safe Operating Area, Junction-to-Ambient
* V
Single Pulse
J
T
Limited by R
= 25 °C
A
GS
= 25 °C
1.2
> minimum V
125
V
DS
New Product
- Drain-to-Source Voltage (V)
BVDSS Limited
150
1.4
DS(on) *
1
GS
at which R
10
DS(on)
1 ms
10 ms
100 ms
1 s, 10 s
DC
is specified
1.0
0.8
0.6
0.4
0.2
0.0
0.01
5
4
3
2
1
0
0
I
On-Resistance vs. Gate-to-Source Voltage
D
= 1 A
100
0.1
1
V
GS
- Gate-to-Source Voltage (V)
Single Pulse Power
2
1
Time (s)
S-81725-Rev. A, 04-Aug-08
Document Number: 68765
T
J
= 25 °C
3
10
T
J
= 125 °C
4
100
600
5