si1450dh Vishay, si1450dh Datasheet

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si1450dh

Manufacturer Part Number
si1450dh
Description
N-channel 8-v D-s Mosfet
Manufacturer
Vishay
Datasheet
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 5 sec.
d. Maximum under Steady State conditions is 125 °C/W.
Document Number: 74275
S-62079-Rev. A, 23-Oct-06
Ordering Information: Si1450DH-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
G
D
D
8
(V)
1
2
3
SC-70 (6-LEADS)
SOT-363
Top View
0.047 at V
0.051 at V
0.058 at V
0.069 at V
r
DS(on)
GS
GS
GS
GS
6
5
4
(Ω)
J
= 4.5 V
= 2.5 V
= 1.8 V
= 1.5 V
= 150 °C)
b, f
D
D
S
N-Channel 8-V (D-S) MOSFET
I
D
4.0
4.0
4.0
4.0
(A)
a
a
a
a
a
d, e
Marking Code
A
AH XX
New Product
Q
= 25 °C, unless otherwise noted
4.24 nC
Steady State
g
T
T
T
T
T
T
T
T
T
T
C
C
C
C
C
t ≤ 5 sec
A
A
A
A
A
(Typ)
Part # Code
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Lot Traceability
and Date Code
FEATURES
APPLICATIONS
• TrenchFET
• 100 % R
• Load Switch for Portable Applications
Symbol
Symbol
T
R
R
- Guaranteed Operation at V
J
V
V
I
P
, T
I
DM
I
thJA
thJF
DS
GS
D
S
Critical for Optimized Design and Space Savings
D
stg
g
Tested
®
Power MOSFET: 1.5 V Rated
Typical
G
60
34
N-Channel MOSFET
- 55 to 150
1.56
1.0
Limit
6.04
4.53
3.62
4.8
2.78
1.78
1.3
260
± 5
2.3
15
8
b, c
b, c
a
c
S
D
a
a
a
Maximum
GS
80
45
Vishay Siliconix
= 1.5 V
Si1450DH
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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si1450dh Summary of contents

Page 1

... Top View Ordering Information: Si1450DH-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si1450DH Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... S-62079-Rev. A, 23-Oct- thru 1 1.5 2 Si1450DH Vishay Siliconix 125 ° ° ° 0.0 0.5 1.0 1.5 V – Gate-to-Source Voltage (V) GS Transfer Characteristics 800 C 600 iss 400 200 C ...

Page 4

... Si1450DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 150 ° 0.1 0.01 0.4 0 0.2 V − Source-to-Drain Voltage (V) SD Forward Diode Voltage vs. Temp 0.8 0.7 0.6 0.5 0.4 0.3 0 – Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.6 0 250 µ 100 125 150 100 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74275 S-62079-Rev. A, 23-Oct-06 100 125 150 - Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi- Si1450DH Vishay Siliconix 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 0 ...

Page 6

... Si1450DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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