si1072x Vishay, si1072x Datasheet

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si1072x

Manufacturer Part Number
si1072x
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 650 °C/W.
Document Number: 73892
S-80641-Rev. C, 24-Mar-08
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
PRODUCT SUMMARY
V
DS
30
(V)
C
= 25 °C.
0.129 at V
0.093 at V
R
DS(on)
GS
GS
J
a
(Ω)
= 4.5 V
= 10 V
= 150 °C)
b, d
G
D
D
Ordering Information: Si1072X-T1-E3 (Lead (Pb)-free)
N-Channel 30-V (D-S) MOSFET
1
2
3
SC-89 (6-LEADS)
a
I
D
1.3
1.2
Top View
(A)
a
A
Q
= 25 °C, unless otherwise noted
Si1072X-T1-GE3 (Lead (Pb)-free and Halogen-free)
g
Steady State
5.41
T
T
L = 0.1 mH
T
T
T
(Typ.)
6
5
4
A
A
A
A
A
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
D
D
S
FEATURES
APPLICATIONS
• Halogen-free Option Available
• TrenchFET
• 100 % R
• Load Switch for Portable Devices
Symbol
Symbol
T
R
J
V
V
E
I
I
P
, T
DM
thJA
I
AS
I
GS
DS
AS
Marking Code
D
S
D
stg
V
XX
Part # Code
g
and UIS Tested
®
Typical
Power MOSFET
Lot Traceability
and Date Code
440
540
- 55 to 150
0.236
0.151
1.03
1.3
0.2
Limit
± 20
3.2
30
6
8
b, c
b, c
b, c
b, c
b, c
Maximum
530
650
Vishay Siliconix
Si1072X
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
A
RoHS
COMPLIANT
1

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si1072x Summary of contents

Page 1

... 0.129 4 SC-89 (6-LEADS Ordering Information: Si1072X-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Continuous Source-Drain Diode Current a ...

Page 2

... Si1072X Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Document Number: 73892 S-80641-Rev. C, 24-Mar- °C, unless otherwise noted 2.0 2.5 1 Si1072X Vishay Siliconix 3.0 2.4 1.8 1 125 °C C 0.6 25 ° °C 0 Gate-to-Source Voltage (V) GS Transfer Characteristics Curves vs. Temp. 400 C iss 300 ...

Page 4

... Si1072X Vishay Siliconix TYPICAL CHARACTERISTICS 150 °C J 0.1 0.01 0.001 0 0.2 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2 250 µA D 2.4 2.2 2.0 1.8 1.6 1 Temperature (°C) J Threshold Voltage Limited by R www.vishay.com °C, unless otherwise noted A 0.20 0.16 0.12 0. °C J 0.04 0.00 0.6 0.8 1 5.0 4.0 3.0 2.0 1.0 0.0 75 100 125 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73892. Document Number: 73892 S-80641-Rev. C, 24-Mar- °C, unless otherwise noted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Si1072X Vishay Siliconix Notes Duty Cycle ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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