si1025x Vishay, si1025x Datasheet

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si1025x

Manufacturer Part Number
si1025x
Description
P-channel 60-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si1025x-T1-E3
Manufacturer:
ADI
Quantity:
14
Part Number:
si1025x-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71433
S-80643-Rev. B, 24-Mar-08
Ordering Information: Si1025X-T1-E3 (Lead (Pb)-free)
V
G
PRODUCT SUMMARY
D
S
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
(BR)DSS (min)
1
1
2
1
2
3
- 60
Top View
SC-89
(V)
4 at V
Si1025X-T1-GE3 (Lead (Pb)-free and Halogen-free)
b
R
DS(on)
6
5
4
GS
= - 10 V
J
a
D
G
S
= 150 °C)
2
(Ω)
1
2
P-Channel 60-V (D-S) MOSFET
V
- 1 to - 3.0
a
GS(th)
Marking Code: D
(V)
a
A
= 25 °C, unless otherwise noted
I
D
- 500
(mA)
T
T
T
T
A
A
A
A
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
BENEFITS
APPLICATIONS
• Halogen-free Option Available
• TrenchFET
• High-Side Switching
• Low On-Resistance: 4 Ω
• Low Threshold: - 2 V (typ.)
• Fast Switching Speed: 20 ns (typ.)
• Low Input Capacitance: 23 pF (typ.)
• Miniature Package
• Ease in Driving Switches
• Low Offset Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Easily Driven Without Buffer
• Small Board Area
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
• Battery Operated Systems
• Power Supply Converter Circuits
• Solid State Relays
Symbol
T
Gate-Source ESD Protected: 2000 V
Memories, Transistors etc.
J
ESD
V
V
I
P
, T
DM
I
I
GS
DS
D
S
D
stg
®
Power MOSFETs
- 200
- 145
- 450
280
145
5 s
- 55 to 150
- 650
2000
± 20
- 60
Steady State
- 190
- 135
- 380
250
130
Vishay Siliconix
Si1025X
www.vishay.com
Unit
mW
mA
°C
V
V
RoHS
COMPLIANT
1

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si1025x Summary of contents

Page 1

... Top View Ordering Information: Si1025X-T1-E3 (Lead (Pb)-free) Si1025X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 ° Pulsed Drain Current Continuous Source Current (Diode Conduction) ...

Page 2

... Si1025X Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static V Drain-Source Breakdown Voltage (BR)DSS V Gate Threshold Voltage GS(th) I Gate-Body Leakage I Zero Gate Voltage Drain Current a I On-State Drain Current D(on Drain-Source On-Resistance DS(on) a Forward Transconductance a V Diode Forward Voltage b Dynamic Total Gate Charge ...

Page 3

... Source-Drain Diode Forward Voltage Document Number: 71433 S-80643-Rev. B, 24-Mar- °C, unless otherwise noted 600 800 1000 1.2 1.5 1 ° °C J 0.9 1.2 1.5 Si1025X Vishay Siliconix iss oss 8 C rss Drain-to-Source Voltage (V) DS Capacitance 1.8 1 ...

Page 4

... Si1025X Vishay Siliconix TYPICAL CHARACTERISTICS Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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