sud45p03-09 Vishay, sud45p03-09 Datasheet

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sud45p03-09

Manufacturer Part Number
sud45p03-09
Description
P-channel 30 V D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUD45P03-09
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
sud45p03-09-GE3
Quantity:
5 100
Part Number:
sud45p03-09-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
sud45p03-09-GE3
Quantity:
70 000
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 65595
S10-0460-Rev. B, 22-Feb-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
Junction-to-Case (Drain)
Ordering Information: SUD45P03-09-GE3 (Lead (Pb)-free and Halogen-free)
V
DS
- 30
(V)
G
TO-252
Top View
D
0.0087 at V
0.0150 at V
S
R
DS(on)
a
Drain Connected to Tab
GS
GS
J
a
(Ω)
= 150 °C)
= - 4.5 V
= - 10 V
c
P-Channel 30 V (D-S) MOSFET
I
- 45
D
- 32
(A)
d
C
Q
= 25 °C, unless otherwise noted
g
(Typ.)
60
T
T
T
L = 0.1 mH
T
A
C
C
C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
c
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Power Switch
• Load Switch in High Current Applications
• DC/DC Converters
Definition
Symbol
Symbol
T
R
J
R
V
V
E
I
g
I
P
, T
DM
I
AS
thJC
GS
thJA
DS
AS
D
D
and UIS Tested
®
stg
Power MOSFET
G
P-Channel MOSFET
- 55 to 150
D
S
- 42.5
Limit
- 100
41.7
- 45
Limit
± 20
- 30
- 35
2.1
61
60
3
SUD45P03-09
d
b
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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sud45p03-09 Summary of contents

Page 1

... 0.0150 4 TO-252 Drain Connected to Tab Top View Ordering Information: SUD45P03-09-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current a Single Avalanche Energy ...

Page 2

... SUD45P03-09 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... 0.010 0.005 0.000 1.5 2.0 2.5 0.05 0.04 0.03 0.02 0. ° 125 ° SUD45P03-09 Vishay Siliconix Drain Current (A) D On-Resistance vs. Drain Current T = 150 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs ...

Page 4

... SUD45P03-09 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 4000 C 3000 iss 2000 1000 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 1.5 1.2 0.9 0 ...

Page 5

... S10-0460-Rev. B, 22-Feb-10 1000 100 10 1 0.1 0.01 0 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUD45P03-09 Vishay Siliconix Limited DS(on) 100 µ ms, 100 °C A Single Pulse BVDSS Limited Drain-to-Source Voltage (V) ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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