irl3103 International Rectifier Corp., irl3103 Datasheet

no-image

irl3103

Manufacturer Part Number
irl3103
Description
30v Single N-channel Hexfet Power Mosfet In A To-220ab Package
Manufacturer
International Rectifier Corp.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRL3103
Manufacturer:
IR
Quantity:
725
Part Number:
IRL3103
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRL3103
Manufacturer:
IR
Quantity:
20 000
Part Number:
irl3103D1
Manufacturer:
IR
Quantity:
132
Part Number:
irl3103D1
Manufacturer:
IR
Quantity:
12 500
Part Number:
irl3103D1S
Manufacturer:
IR
Quantity:
800
Part Number:
irl3103D1STRL
Manufacturer:
IR
Quantity:
20 000
Part Number:
irl3103L
Manufacturer:
IR
Quantity:
20 000
Part Number:
irl3103PBF
Manufacturer:
IR
Quantity:
8 000
Part Number:
irl3103PBF
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
irl3103PBF
Quantity:
25 780
Part Number:
irl3103S
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
irl3103S
Quantity:
50
Thermal Resistance
Absolute Maximum Ratings
Advanced HEXFET
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts.
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
www.irf.com
Description
R
R
R
I
I
I
P
V
I
E
dv/dt
T
T
D
D
DM
AR
J
STG
D
GS
AR
JC
CS
JA
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
@T
C
C
C
= 25°C
= 100°C
= 25°C
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
®
Power MOSFETs from International
Parameter
Parameter
The low thermal
GS
GS
@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
0.50
–––
–––
HEXFET
10 lbf•in (1.1N•m)
-55 to + 175
D
S
TO-220AB
Max.
0.63
220
± 16
5.0
64
45
94
34
22
®
R
IRL3103
Power MOSFET
Max.
DS(on)
V
–––
1.6
62
DSS
I
D
= 64A
PD - 91337
= 12m
= 30V
Units
Units
W/°C
°C/W
V/ns
mJ
°C
W
A
V
A
1
3/16/01

Related parts for irl3103

irl3103 Summary of contents

Page 1

... R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA www.irf.com G The low thermal @ 10V GS @ 10V GS 300 (1.6mm from case ) Typ. ––– 0.50 ––– 91337 IRL3103 ® HEXFET Power MOSFET 30V DSS R = 12m DS(on 64A D S TO-220AB Max. Units 64 45 ...

Page 2

... IRL3103 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... Fig 2. Typical Output Characteristics 2 2.0 ° 175 C J 1.5 1.0 0.5 = 15V 0.0 -60 -40 -20 0 6.0 7.0 8.0 Fig 4. Normalized On-Resistance IRL3103 VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V 2.7V 20µs PULSE WIDTH ° 175 Drain-to-Source Voltage (V) DS 56A V = 10V 100 120 140 160 180 ° ...

Page 4

... IRL3103 3000 1MHz iss rss gd 2500 oss ds gd 2000 C iss 1500 C oss 1000 500 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 ° 175 ° ...

Page 5

... Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 t , Rectangular Pulse Duration (sec) 1 IRL3103 D.U. µ d(off ...

Page 6

... IRL3103 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 240 1 5V 200 ...

Page 7

... R I controlled by Duty Factor "D" SD D.U.T. - Device Under Test Period D = P.W. Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% = 5.0V for Logic Level and 3V Drive Devices GS ® HEXFET power MOSFETs IRL3103 + + P.W. Period [ ] *** V =10V ...

Page 8

... IRL3103 Package Outline TO-220AB Dimensions are shown in millimeters (inches) 10 .54 (.4 15) 10 .29 (.4 05) 2.87 (.11 3) 2.62 (. 5.24 (. 4.84 (. 4.09 (. 3. 2.54 (. & ING 4. 82. ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

Related keywords