si4599dy Vishay, si4599dy Datasheet - Page 9

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si4599dy

Manufacturer Part Number
si4599dy
Description
N- And P-channel 40-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68971
S-82619-Rev. A, 03-Nov-08
- 0.2
- 0.4
0.001
0.01
0.8
0.6
0.4
0.2
0.0
100
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
J
- Source-to-Drain Voltage (V)
Threshold Voltage
= 150 °C
T
0.4
J
25
- Temperature (°C)
0.6
50
75
I
D
0.8
= 250 µA
0.01
100
0.1
10
100
0
T
1
0 .
J
= 25 °C
1
1.0
I
D
Safe Operating Area, Junction-to-Ambient
* V
Limited by R
125
= 1 mA
GS
New Product
> minimum V
V
1.2
150
DS
Single Pulse
0.1
T
C
- Drain-to-Source Voltage (V)
DS(on)
= 25 °C
*
GS
at which R
1
0.20
0.16
0.12
0.08
0.04
0.00
DS(on)
50
40
30
20
10
0
0
1
0 .
0
0
is specified
0
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
1 ms
100 ms
10 s
DC
10 ms
1 s
2
V
1
GS
0.01
0
0
- Gate-to-Source Voltage (V)
3
4
Time (s)
0.1
5
Vishay Siliconix
6
Si4599DY
7
www.vishay.com
T
1
T
J
J
I
8
D
= 125 °C
= 25 °C
= 5 A
9
10
1
0
9

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