si4638dy Vishay, si4638dy Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
si4638dy
Manufacturer Part Number
si4638dy
Description
N-channel 30-v D-s Mosfet With Schottky Diode
Manufacturer
Vishay
Datasheet
1.SI4638DY.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si4638dy-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si4638dy-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4638DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
10
10
10
10
10
10
0.01
100
0.1
10
-2
-3
-4
-5
-6
-1
1
0
0
Source-Drain Diode Forward Voltage
25
0.2
Reverse Current (Schottky)
V
T
SD
T
J
J
- Junction Temperature (°C)
- Source-to-Drain Voltage (V)
= 150 °C
50
30 V
0.4
10 V
75
T
J
0.6
= 25 °C
20 V
0.01
100
100
0.1
10
1
0.01
Limited by R
* V
Single Pulse
0.8
T
125
A
GS
= 25 °C
> minimum V
V
0.1
DS
New Product
DS(on)
Safe Operating Area
150
1.0
- Drain-to-Source Voltage (V)
*
GS
at which R
1
BVDSS Limited
DS(on)
0.020
0.016
0.012
0.008
0.004
10
300
240
180
120
60
is specified
0
0
0
0 .
0
0
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
1
100
2
V
0.01
GS
3
- Gate-to-Source Voltage (V)
4
Time (s)
T
0.1
5
J
S-81583-Rev. A, 07-Jul-08
= 25 °C
Document Number: 68745
6
T
J
7
= 125 °C
1
I
D
8
= 15 A
9
10
1
0